SOT23 Plastic Package Transistor CBI MMBTSA1037 PNP Silicon Epitaxial Planar for Various Electronics
Product Overview
This PNP Silicon Epitaxial Planar Transistor is designed for various electronic applications. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for different performance requirements. The transistor is housed in a compact SOT-23 plastic package. Special requests for different pin configurations can be accommodated.
Product Attributes
- Package Type: SOT-23 Plastic Package
- Transistor Type: PNP Silicon Epitaxial Planar
- Grouping by DC Current Gain: Q, R, S
- Customization: Available in different pin configurations upon special request
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||
| Collector Base Voltage | -VCBO | 60 | V | |
| Collector Current | -IC | 150 | mA | |
| Power Dissipation | Ptot | 200 | mW | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | TS | -55 to +150 | C | |
| Characteristics at Tamb = 25 C | ||||
| DC Current Gain at -VCE=6V, -IC=1mA | hFE (Group Q) | 120 - 180 | - | |
| hFE (Group R) | 180 - 270 | - | ||
| hFE (Group S) | 270 - 560 | - | ||
| Collector Cutoff Current at -VCB=60V | -ICBO | - | 0.1 A | Max |
| Emitter Cutoff Current at -VEB=6V | -IEBO | - | 0.1 A | Max |
| Collector Saturation Voltage at -IC=50mA, -IB=5mA | -VCE(sat) | - | 0.5 V | Max |
| Collector Base Breakdown Voltage at -IC=50A | -V(BR)CBO | 60 | V | Min |
| Collector Emitter Breakdown Voltage at -IC=1mA | -V(BR)CEO | 50 | V | Min |
| Emitter Base Breakdown Voltage at -IE=50A | -V(BR)EBO | 6 | V | Min |
| Transition Frequency at -VCE=12V, -IC=2mA, f=30MHz | fT | 120 | MHz | Min |
2509181520_CBI-MMBTSA1037_C51814208.pdf
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