Integrated monolithic bias resistor network digital transistors CBI MMUN5331DW for compact circuits

Key Attributes
Model Number: MMUN5331DW
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN5331DW
Package:
SOT-363
Product Description

Product Overview

The MMUN5311DW series are NPN and PNP Silicon Surface Mount Transistors featuring an integrated monolithic bias resistor network. These digital transistors are designed to replace discrete transistors and their external bias networks, simplifying circuit design, reducing board space, and decreasing component count. The MMUN5311DW series houses two complementary BRT devices in a SOT-363 package, making them ideal for low-power surface mount applications where space is limited. The product material complies with RoHS requirements.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material Compliance: RoHS
  • Package Type: SOT-363

Technical Specifications

Model Package Marking R1 (k) R2 (k) Shipping Quantity
MMUN5311DW SOT-363 11 10 10 3000/Tape&Reel
MMUN5312DW SOT-363 12 22 22 3000/Tape&Reel
MMUN5313DW SOT-363 13 47 47 3000/Tape&Reel
MMUN5314DW SOT-363 14 10 47 3000/Tape&Reel
MMUN5315DW SOT-363 15 10 - 3000/Tape&Reel
MMUN5316DW SOT-363 16 4.7 - 3000/Tape&Reel
MMUN5330DW SOT-363 30 1 1 3000/Tape&Reel
MMUN5331DW SOT-363 31 2.2 2.2 3000/Tape&Reel
MMUN5332DW SOT-363 32 4.7 4.7 3000/Tape&Reel
MMUN5333DW SOT-363 33 4.7 47 3000/Tape&Reel
MMUN5334DW SOT-363 34 22 47 3000/Tape&Reel
MMUN5335DW SOT-363 35 2.2 47 3000/Tape&Reel

Maximum Ratings

Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc

Thermal Characteristics (TA = 25C)

Characteristic Symbol Value (Note 1) Value (Note 2) Unit
Total Device Dissipation (One Junction Heated) PD 187 256 mW
Derate above 25C (One Junction Heated) 1.5 2.0 mW/C
Thermal Resistance Junction-to-Ambient (One Junction Heated) RJA 670 490 C/W
Total Device Dissipation (Both Junctions Heated) PD 250 385 mW
Derate above 25C (Both Junctions Heated) 2.0 3.0 mW/C
Thermal Resistance Junction-to-Ambient (Both Junctions Heated) RJA 493 325 C/W
Thermal Resistance Junction-to-Lead RJL 188 208 C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 C

Electrical Characteristics (TA = 25C)

Characteristic Symbol Model Min Typ Max Unit
DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE MMUN5311DW 35 60 80
MMUN5312DW 60 100 140
MMUN5313DW - - -
MMUN5314DW 80 140 -
MMUN5315DW 160 350 -
MMUN5316DW 160 350 -
MMUN5330DW 3.0 5.0 -
MMUN5331DW 8.0 15 -
MMUN5332DW 15 30 -
MMUN5333DW 80 200 -
MMUN5334DW 80 150 -
MMUN5335DW 80 140 -
Collector-Emitter Saturation Voltage (IC = 10 mA) VCE(sat) MMUN5330DW /MMUN5331DW (IB = 0.3 mA) - - 0.25 Vdc
LMUN5315DW/MMUN5316DW (IB = 5 mA) - - 0.2
MMUN5332DW /MMUN5333DW /MMUN5334DW (IB = 1 mA) - - 0.2
MMUN5311DW (IB = 0.3 mA) - - 0.2
Output Voltage (on) (VCC = 5.0 V, RL = 1.0 k) VOL MMUN5311DW (VB = 2.5 V) - - 0.2 Vdc
MMUN5312DW (VB = 2.5 V) - - 0.2
MMUN5313DW (VB = 3.5 V) - - 0.2
MMUN5314DW (VB = 2.5 V) - - 0.2
MMUN5315DW (VB = 2.5 V) - - 0.2
MMUN5316DW (VB = 2.5 V) - - 0.2
MMUN5330DW (VB = 2.5 V) - - 0.2
MMUN5331DW (VB = 2.5 V) - - 0.2
MMUN5332DW (VB = 2.5 V) - - 0.2
MMUN5333DW (VB = 2.5 V) - - 0.2
MMUN5334DW (VB = 2.5 V) - - 0.2
MMUN5335DW (VB = 2.5 V) - - 0.2
Output Voltage (off) (VCC = 5.0 V, RL = 1.0 k) VOH MMUN5330DW (VB = 0.5 V) 4.9 - - Vdc
MMUN5315DW (VB = 0.050 V) - - - Vdc
MMUN5316DW (VB = 0.25 V) - - - Vdc
MMUN5333DW (VB = 0.5 V) - - - Vdc
Input Resistor R1 MMUN5311DW 7.0 10 13 k
MMUN5312DW 15.4 22 28.6
MMUN5313DW 32.9 47 61.1
MMUN5314DW 7.0 10 13
MMUN5315DW 7.0 10 13
MMUN5316DW 3.3 4.7 6.1
MMUN5330DW 0.7 1.0 1.3
MMUN5331DW 1.5 2.2 2.9
MMUN5332DW 3.3 4.7 6.1
MMUN5333DW 3.3 4.7 6.1
MMUN5334DW 15.4 22 28.6
MMUN5335DW 1.54 2.2 2.86
Resistor Ratio R1/R2 R1/R2 MMUN5311DW /MMUN5312DW/MMUN5313DW 0.8 1.0 1.2
MMUN5314DW 0.17 0.21 0.25
MMUN5315DW /LMUN5316DW - - -
MMUN5330DW /MMUN5331DW /MMUN5332DW 0.8 1.0 1.2
MMUN5333DW 0.055 0.1 0.185
MMUN5334DW 0.38 0.47 0.56
MMUN5335DW 0.038 0.047 0.056
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO ALL - - 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO ALL - - 500 nAdc
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO MMUN5311DW - - 0.5 mAdc
MMUN5312DW - - 0.2
MMUN5313DW - - 0.1
MMUN5314DW - - 0.2
MMUN5315DW - - 0.9
MMUN5316DW - - 1.9
MMUN5330DW - - 4.3
MMUN5331DW - - 2.3
MMUN5332DW - - 1.5
MMUN5333DW - - 0.18
MMUN5334DW - - 0.13
MMUN5335DW - - 0.2
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO ALL 50 - - Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO ALL 50 - - Vdc

2409302135_CBI-MMUN5331DW_C21714121.pdf

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