Surface Mount P Channel MOSFET BORN SI2309S Featuring Trench Process Technology and Low On Resistance
Key Attributes
Model Number:
SI2309S
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.9A
Operating Temperature -:
-50℃~+150℃
RDS(on):
215mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 P-Channel
Output Capacitance(Coss):
41pF
Input Capacitance(Ciss):
364pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.3nC@0V
Mfr. Part #:
SI2309S
Package:
SOT-23-3L
Product Description
Product Overview
The SI2309S is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for surface mount applications and is suitable for load switches, switching circuits, and high-speed line drivers. This device offers a drain-source breakdown voltage of -60V and is available in a SOT-23-3L package.
Product Attributes
- Brand: Not explicitly stated, but associated with www.born-tw.com
- Package Type: SOT-23-3L
- Marking: WMGxx
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Common Ratings (TA=25C Unless Otherwise Noted) | ||||||
| VGS | Gate-Source Voltage | 20 | V | |||
| V(BR)DSS | Drain-Source Breakdown Voltage | -60 | V | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -50 | 150 | C | ||
| IDM | Pulse Drain Current (Mounted on Large Heat Sink) | @TA=25 | -7.6 | A | ||
| ID | Continuous Drain Current | @TA=25 | -1.9 | A | ||
| ID | Continuous Drain Current | @TA=70 | -1.5 | A | ||
| PD | Maximum Power Dissipation | @TA=25 | 1.4 | W | ||
| PD | Maximum Power Dissipation | @TA=70 | 0.9 | W | ||
| JA | Thermal Resistance Junction-Ambient | 90 | C/W | |||
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250A | -60 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-60V, VGS=0V (@TA=25) | -10 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-60V, VGS=0V (@TA=125) | -100 | uA | ||
| IGSS | Gate-Body Leakage Current | VGS=20V, VDS=0V | 100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=-250A | -1.0 | -3 | V | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-10V, ID=-1.8A | 170 | 215 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-4.5V, ID=-1.4A | 200 | 260 | m | |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=-25V, VGS=0V, f=1MHz | 364 | pF | ||
| Coss | Output Capacitance | 41 | pF | |||
| Crss | Reverse Transfer Capacitance | 12 | pF | |||
| Qg | Total Gate Charge | VDS=-48V, ID=-1A, VGS=-4.5V | 6.3 | nC | ||
| Qgs | Gate Source Charge | 2.3 | nC | |||
| Qgd | Gate Drain Charge | 1.8 | nC | |||
| Switching Characteristics | ||||||
| td(on) | Turn on Delay Time | VDD=-30V, ID=-1A, RG=3.3, VGS=-10V | 20 | ns | ||
| trt | Turn on Rise Time | 33.1 | ns | |||
| td(off) | Turn Off Delay Time | 5.2 | ns | |||
| tft | Turn Off Fall Time | 3.8 | ns | |||
| Source Drain Diode Characteristics | ||||||
| VSD | Forward on voltage | Tj=25, ISD=-1.2A, VGS=0V | -1.2 | V | ||
| Ordering Information | ||||||
| Order code | Package | Base qty | Delivery mode | |||
| SI2309S | SOT-23-3L | 3K | Tape and reel | |||
2410121739_BORN-SI2309S_C2997263.pdf
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