Load Switch N Channel MOSFET Featuring Bruckewell MS20N06S with Low Gate Charge and Trench Technology
Key Attributes
Model Number:
MS20N06S
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
68pF
Number:
1 N-channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
670pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
8.6nC@4.5V
Mfr. Part #:
MS20N06S
Package:
SOT-23
Product Description
Product Overview
The MS20N06S is a high-performance N-Channel MOSFET featuring advanced high cell density Trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for various small power switching and load switch applications. This device meets RoHS and Green Product requirements and has passed full function reliability testing. Typical applications include notebook computers, load switches, and hand-held instruments.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS Compliant, Green Device Available
- Package Type: SOT-23
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID | Continuous Drain Current | (TA =25°C) | 6 | A | ||
| (TA =70°C) | 5 | A | ||||
| IDM | Pulsed Drain Current | (TA =25°C) | 17 | A | ||
| PD | Power Dissipation | (TA =25°C) | 1 | W | ||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient | 125 | °C/W | |||
| Electrical Characteristics (TJ =25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250μA | 0.45 | - | 1.0 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250μA | 20 | - | - | V |
| gfs | Forward Transconductance | VDS =5V, ID =4A | - | 30 | - | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±12V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =16V, VGS =0V, TJ =25°C | - | - | 1 | μA |
| VDS =16V, VGS =0V, TJ =55°C | - | - | 5 | μA | ||
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =4.0A | - | - | 21 | mΩ |
| VGS =2.5V, ID =3.0A | - | - | 28 | mΩ | ||
| VGS =1.8V, ID =2.0A | - | - | 40 | mΩ | ||
| VSD | Diode Forward Voltage | IS =1.0A, VGS =0V, TJ =25°C | - | - | 1.2 | V |
| IS | Continuous Source Current | (Diode) VG =VD =0V, Force Current | - | - | 6 | A |
| ISM | Pulsed Source Current | (Diode) | - | - | 17 | A |
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge | VDS =15V ID =4A VGS =4.5V | -- | 8.6 | -- | nC |
| Qgs | Gate-Source Charge | -- | 1.37 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 2.3 | -- | nC | |
| td(on) | Turn-On Delay Time | VDS =10V ID =4A VGS =4.5V RG =3.3Ω | -- | 5.2 | -- | ns |
| tr | Rise Time | -- | 34 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 23 | -- | ns | |
| tf | Fall Time | -- | 9.2 | -- | ns | |
| CISS | Input Capacitance | VDS =15V VGS =0V f =1.0MHz | -- | 670 | -- | pF |
| COSS | Output Capacitance | -- | 75 | -- | pF | |
| CRSS | Reverse Transfer Capacitance | -- | 68 | -- | pF | |
2412061551_Bruckewell-MS20N06S_C42407717.pdf
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