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quality 60 Volt N Channel MOSFET Bruckewell MSP60N085 Featuring Low On Resistance and Robust Pulse Handling factory
quality 60 Volt N Channel MOSFET Bruckewell MSP60N085 Featuring Low On Resistance and Robust Pulse Handling factory

60 Volt N Channel MOSFET Bruckewell MSP60N085 Featuring Low On Resistance and Robust Pulse Handling

Key Attributes
Model Number: MSP60N085
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
63A
RDS(on):
8.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
472pF
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
1.27nF
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
MSP60N085
Package:
TO-220
Product Description

Product Overview

The MSP60N085 is a high-performance N-Channel 60-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)), deliver superior switching performance, and provide robust high-energy pulse handling capabilities in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include networking, load switching, synchronous rectification, and quick chargers.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Technology: Trench DMOS
  • Channel Type: N-Channel
  • Compliance: RoHS Compliant, Green Device Available
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
Maximum Ratings
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage 20 V
ID Continuous Drain Current (TC =25C) 63 A
ID Continuous Drain Current (TC =100C) 40 A
IDM Pulsed Drain Current 150 A
IAS Single Pulse Avalanche Current (L =0.1mH) 23 A
EAS Single Pulse Avalanche Energy (L =0.1mH) 26.5 mJ
PD Power Dissipation (TC =25C) 62.5 W
TJ/TSTG Operating Junction and Storage Temperature -55 150 C
Thermal Resistance Ratings
RJA Maximum Junction-to-Ambient 60 C/W
RJC Maximum Junction-to-Case 2 C/W
Electrical Characteristics (TJ=25C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =250A 1.2 - 2.3 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =250A 60 - - V
IGSS Gate-Source Leakage Current VDS =0V, VGS =20V - - 100 nA
IDSS Drain-Source Leakage Current VDS =48V, VGS =0V, TJ =25C - - 1 A
IDSS Drain-Source Leakage Current VDS =48V, VGS =0V, TJ =55C - - 5 A
RDS (on) Static Drain-Source On-Resistance VGS =10V, ID =20A - 8.5 - m
RDS (on) Static Drain-Source On-Resistance VGS =4.5V, ID =10A - 10.5 13 m
EAS Single Pulse Avalanche Energy VDD =50V, L =0.1mH, IAS =15A 11 - - mJ
VSD Diode Forward Voltage IS =1A, VGS =0V, TJ =25C - - 1.2 V
IS Continuous Source Current VG =VD =0V, Force Current - - 30 A
ISM Pulsed Source Current - - 90 A
Dynamic Characteristics
Qg Total Gate Charge VDS =30V ID =15A VGS =10V - 15 - nC
Qgs Gate-Source Charge - 3.5 - nC
Qgd Gate-Drain Charge - 4.2 - nC
td(on) Turn-On Delay Time VDS =30V ID =15A VGS =10V RG =3.3 - 7 - ns
tr Rise Time - 4.5 - ns
td(off) Turn-Off Delay Time - 26 - ns
tf Fall Time - 5 - ns
CISS Input Capacitance VDS =30V VGS =0V f =1.0MHz - 1270 - pF
COSS Output Capacitance - 472 - pF
CRSS Reverse Transfer Capacitance - 40 - pF
Package Information
Package Type TO-220
Packing 2,000/Box
Model Number MSP60N085

2412061551_Bruckewell-MSP60N085_C42407750.pdf

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