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quality PNP transistor CBI MMBT3906W with 150 degree junction temperature and 40 volt collector base voltage factory
quality PNP transistor CBI MMBT3906W with 150 degree junction temperature and 40 volt collector base voltage factory

PNP transistor CBI MMBT3906W with 150 degree junction temperature and 40 volt collector base voltage

Key Attributes
Model Number: MMBT3906W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3906W
Package:
SOT-323
Product Description

Product Overview

The MMBT3906W is a PNP Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. It offers reliable performance with specified characteristics for DC current gain, cutoff currents, and breakdown voltages.

Product Attributes

  • Marking Code: 3N

Technical Specifications

Parameter Symbol Value Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage -VCBO 40 V
Collector Emitter Voltage -VCEO 40 V
Emitter Base Voltage -VEBO 5 V
Collector Current -IC 200 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C
Characteristics at Ta = 25 C
DC Current Gain at -VCE = 1 V, -IC = 0.1 mA hFE 60 -
DC Current Gain at -VCE = 1 V, -IC = 1 mA hFE 80 -
DC Current Gain at -VCE = 1 V, -IC = 10 mA hFE 100 -
DC Current Gain at -VCE = 1 V, -IC = 50 mA hFE 60 -
DC Current Gain at -VCE = 1 V, -IC = 100 mA hFE 30 -
Collector Emitter Cutoff Current at -VCE = 30 V -ICES - 50 nA
Emitter Base Cutoff Current at -VEB = 3 V -IEBO - 50 nA
Collector Base Breakdown Voltage at -IC = 10 A -V(BR)CBO 40 V
Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 40 V
Emitter Base Breakdown Voltage at -IE = 10 A -V(BR)EBO 5 V
Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA -VCE(sat) - 0.25 V
Collector Emitter Saturation Voltage at -IC = 50 mA, -IB = 5 mA -VCE(sat) - 0.4 V
Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA -VBE(sat) 0.65 V
Base Emitter Saturation Voltage at -IC = 50 mA, -IB = 5 mA -VBE(sat) 0.85 V
Transition Frequency at -VCE = 20 V, IE = 10 mA, f = 100 MHz fT 250 MHz
Collector Output Capacitance at -VCB = 10 V, f = 100 KHz Cob - 4.5 pF
Delay Time at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA td - 35 ns
Rise Time at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA tr - 35 ns
Storage Time at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA tstg - 225 ns
Fall Time at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA tf - 75 ns

2410121248_CBI-MMBT3906W_C2828432.pdf

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