Trench DMOS Technology MOSFET Bruckewell MSHM40N085 with 40 Volt Drain Source Voltage and Operation
Key Attributes
Model Number:
MSHM40N085
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
43A
RDS(on):
8.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
38pF
Input Capacitance(Ciss):
690pF@15V
Pd - Power Dissipation:
27.8W
Gate Charge(Qg):
5.8nC@4.5V
Mfr. Part #:
MSHM40N085
Package:
PDFN3.3x3.3-8
Product Description
Product Overview
The MSHM40N085 is an N-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized for minimal RDS(ON), superior switching performance, and enhanced high-energy pulse handling in avalanche and commutation modes. It is well-suited for high-efficiency, fast-switching applications and meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approval. Key features include a low RDS(ON) of 8.5m @ VGS =10V, super low gate charge, and 100% EAS guaranteed. Typical applications include motor control, DC/DC converters, and synchronous rectifier applications.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Guarantees: 100% EAS Guaranteed, Full Function Reliability Approved
- Package Type: PDFN 3.3X3.3
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TC =25°C) | 43 | A | |||
| ID | Continuous Drain Current (TC =100°C) | 28 | A | |||
| IDM | Pulsed Drain Current | 60 | A | |||
| IAS | Single Pulse Avalanche Current, L =0.1mH | 30 | A | |||
| EAS | Single Pulse Avalanche Energy, L =0.1mH | 45 | mJ | |||
| PD | Power Dissipation (TC =25°C) | 27.8 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | 150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient | 65 | °C/W | |||
| RθJC | Maximum Junction-to-Case | 4.5 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250µA | 1.0 | 1.5 | 2.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250µA | 40 | - | - | V |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =32V, VGS =0V, TJ =25°C | - | - | 1 | µA |
| IDSS | Drain-Source Leakage Current | VDS =32V, VGS =0V, TJ =55°C | - | - | 5 | µA |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =12A | - | 8.5 | - | mΩ |
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =10A | - | 10.5 | 15 | mΩ |
| EAS | Single Pulse Avalanche Energy | VDD =25V, L =0.1mH, IAS =15A | 11 | - | - | mJ |
| VSD | Diode Forward Voltage | IS =1A, VGS =0V, TJ =25°C | - | - | 1.0 | V |
| IS | Continuous Source Current | VG =VD =0V, Force Current | - | - | 30 | A |
| ISM | Pulsed Source Current | - | - | 60 | A | |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =20V ID =12A VGS =4.5V | -- | 5.8 | -- | nC |
| Qgs | Gate-Source Charge | -- | 3 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 1.2 | -- | nC | |
| td(on) | Turn-On Delay Time | VDS =15V ID =1A VGS =10V RG =3.3Ω | -- | 14.3 | -- | ns |
| tr | Rise Time | -- | 5.6 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 20 | -- | ns | |
| tf | Fall Time | -- | 11 | -- | ns | |
| CISS | Input Capacitance | VDS =15V VGS =0V f =1.0MHz | -- | 690 | -- | pF |
| COSS | Output Capacitance | -- | 193 | -- | pF | |
| CRSS | Reverse Transfer Capacitance | -- | 38 | -- | pF | |
| Rg | Gate Resistance | VDS =0V, VGS =0V, f =1.0MHz | 1.7 | - | - | Ω |
Notes:
- 1. Data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
- 2. Data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
- 3. EAS data shows maximum rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=30A.
- 4. Power dissipation is limited by 150°C junction temperature.
- 5. Minimum value is 100% EAS tested guarantee.
- 6. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121637_Bruckewell-MSHM40N085_C22465535.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
