Low gate charge P Channel MOSFET Bruckewell MSQ40P07D ideal for synchronous buck converter motor drive and LED lighting
Key Attributes
Model Number:
MSQ40P07D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Output Capacitance(Coss):
108pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
1.004nF
Gate Charge(Qg):
9nC@20V
Mfr. Part #:
MSQ40P07D
Package:
SOP-8
Product Description
Product Overview
The MSQ40P07D is a high-performance P-Channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval. Its key features include low gate charge, excellent CdV/dt effect decline, and suitability for motor drive, power tools, and LED lighting applications.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Type: P-Channel MOSFET
- Compliance: RoHS, Green Product
- Testing: 100% EAS Guaranteed
Technical Specifications
| Parameter | Value | Units | Conditions |
|---|---|---|---|
| Product Model | MSQ40P07D | - | - |
| P-Channel 40-V (D-S) MOSFET | - | - | - |
| RDS(ON) | 40 | m | VGS = -10V |
| Gate Charge | Super Low | - | - |
| CdV/dt effect decline | Excellent | - | - |
| EAS | 100% Guaranteed | - | - |
| Typical Applications | Motor Drive, Power Tools, LED Lighting | - | - |
| Package Type | SOP-8 | - | - |
| Packing | 3,000/Reel | - | - |
| Drain-Source Voltage (VDS) | -40 | V | - |
| Gate-Source Voltage (VGS) | 20 | V | - |
| Continuous Drain Current (ID) | -6.5 | A | TA = 25C |
| Continuous Drain Current (ID) | -5.1 | A | TA = 70C |
| Pulsed Drain Current (IDM) | -13 | A | - |
| Single Pulse Avalanche Current (IAS) | -27.2 | A | L = 0.1mH |
| Single Pulse Avalanche Energy (EAS) | 37 | mJ | L = 0.1mH |
| Power Dissipation (PD) | 2.5 | W | TC = 25C |
| Operating/Storage Temperature | -55 to +150 | C | - |
| Junction-to-Ambient Thermal Resistance (RJA) | 85 | C/W | - |
| Junction-to-Case Thermal Resistance (RJC) | 50 | C/W | - |
| Gate Threshold Voltage (VGS(th)) | -1.0 to -2.5 | V | VDS = VGS, ID = -250A |
| Drain-Source Breakdown Voltage (BVDSS) | -40 | V | VGS = 0V, ID = -250A |
| Forward Transconductance (gfs) | 12 | S | VDS = -5V, ID = -6A |
| Gate-Source Leakage Current (IGSS) | 100 | nA | VDS = 0V, VGS = 20V |
| Drain-Source Leakage Current (IDSS) | -1 to -5 | A | VDS = -32V, VGS = 0V, TJ = 25C / 55C |
| Static Drain-Source On-Resistance (RDS(on)) | 40, 65 | m | VGS = -10V, ID = -6A / VGS = -4.5V, ID = -4A |
| Diode Forward Voltage (VSD) | -1.2 | V | IS = -6A, VGS = 0V, TJ = 25C |
| Continuous Source Current (IS) | -6.5 | A | - |
| Pulsed Source Current (ISM) | -13 | A | - |
| Total Gate Charge (Qg) | 9 | nC | VDS = -20V, ID = -6A, VGS = -4.5V |
| Gate-Source Charge (Qgs) | 2.5 | nC | - |
| Gate-Drain Charge (Qgd) | 3.1 | nC | - |
| Turn-On Delay Time (td(on)) | 19.2 | ns | - |
| Rise Time (tr) | 12.8 | ns | - |
| Turn-Off Delay Time (td(off)) | 48.6 | ns | - |
| Fall Time (tf) | 4.6 | ns | VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3 |
| Input Capacitance (CISS) | 1004 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz |
| Output Capacitance (COSS) | 108 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance (CRSS) | 80 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz |
| Gate Resistance (Rg) | 16 | VGS = VDS = 0V, f = 1.0MHz |
2410121628_Bruckewell-MSQ40P07D_C22465531.pdf
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