Power MOSFET Bruckewell MSH60N35D Dual N Channel Device Suitable for Load Switching and General Purpose
Key Attributes
Model Number:
MSH60N35D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 N-Channel
Input Capacitance(Ciss):
2.423nF@15V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
19.3nC@4.5V
Mfr. Part #:
MSH60N35D
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH60N35D is a Dual N-Channel MOSFET utilizing advanced Trench technology and design, engineered to deliver excellent RDS(ON) with low gate charge. This device is ideal for PWM, load switching, and general-purpose applications. It adheres to RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: MSH60N35D
- Certifications: RoHS Compliant, Green Device Available
- Technology: Advanced Trench
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | ±20 | V | ||
| ID | Continuous Drain Current (TC =25°C) | 35 | A | |||
| ID | Continuous Drain Current (TC =100°C) | 22 | A | |||
| IDM | Pulsed Drain Current | 80 | A | |||
| IAS | Single Pulse Avalanche Current (L =0.1mH) | 28 | A | |||
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 39.2 | mJ | |||
| PD | Power Dissipation (TC =25°C) | 45 | W | |||
| PD | Power Dissipation (TA =25°C) | 2 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient | 62 | °C/W | |||
| RθJC | Maximum Junction-to-Case | 5 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250µA | 1.2 | 1.7 | 2.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250µA | 60 | - | - | V |
| gfs | Forward Transconductance | VDS =5V, ID =15A | - | 45 | - | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =48V, VGS =0V, TJ =25°C | - | - | 1 | µA |
| IDSS | Drain-Source Leakage Current | VDS =48V, VGS =0V, TJ =125°C | - | - | 5 | µA |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =20A | - | - | 20 | mΩ |
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =15A | - | - | 24 | mΩ |
| EAS | Single Pulse Avalanche Energy | VDD =25V, L =0.1mH, IAS =14A | 9.8 | - | - | mJ |
| VSD | Diode Forward Voltage | IS =1A, VGS =0V, TJ =25°C | - | - | 1.0 | V |
| IS | Continuous Source Current | VG =VD =0V, Force Current | - | - | 35 | A |
| ISM | Pulsed Source Current | - | - | 80 | A | |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =48V ID =15A VGS =4.5V | -- | 19.3 | -- | nC |
| Qgs | Gate-Source Charge | -- | 7.1 | -- | nC | |
| Qgd | Gate-Drain (“Miller”) Charge | -- | 7.6 | -- | nC | |
| td(on) | Turn-On Delay Time | VDD =30V ID =15A VGS =10V RG =3.3Ω | -- | 7.2 | -- | ns |
| tr | Rise Time | -- | 50 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 36.4 | -- | ns | |
| tf | Fall Time | -- | 7.6 | -- | ns | |
| CISS | Input Capacitance | VDS =15V VGS =0V f =1.0MHz | -- | 2423 | -- | pF |
| COSS | Output Capacitance | -- | 145 | -- | pF | |
| CRSS | Reverse Transfer Capacitance | -- | 97 | -- | pF | |
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | -- | 1.7 | -- | Ω |
| Typical Applications | ||||||
| Motor Drive, Power Tools, LED Lighting | ||||||
| Package Type | ||||||
| PDFN 5X6 Dual | ||||||
| Packing & Order Information | ||||||
| 3,000/Reel | ||||||
| Model Number | ||||||
| MSH60N35D | ||||||
2410121909_Bruckewell-MSH60N35D_C22374931.pdf
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