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quality General Purpose NPN Silicon Epitaxial Planar Transistor CBI BC846CW with Voltage and Current Ratings factory
quality General Purpose NPN Silicon Epitaxial Planar Transistor CBI BC846CW with Voltage and Current Ratings factory

General Purpose NPN Silicon Epitaxial Planar Transistor CBI BC846CW with Voltage and Current Ratings

Key Attributes
Model Number: BC846CW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Mfr. Part #:
BC846CW
Package:
SOT-323
Product Description

Product Overview

This document details the NPN Silicon Epitaxial Planar Transistor series, including models BC846W, BC847W, BC848W, BC849W, and BC850W. These transistors are designed for general purpose and switching applications. Key characteristics include various voltage ratings, current handling capabilities, and DC current gain (hFE) across different grades (AW, BW, CW). The series offers specific performance parameters such as collector-emitter saturation voltage (VCE(sat)), base-emitter voltage (VBE), transition frequency (fT), and collector output capacitance (Cob).

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Models Value Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO BC846W, BC847W, BC848W, BC849W, BC850W 80, 50, 30, 30, 50 V
Collector Emitter Voltage VCEO BC846W, BC847W, BC848W, BC849W, BC850W 65, 45, 30, 30, 45 V
Emitter Base Voltage VEBO BC846W, BC847W, BC848W, BC849W, BC850W 6, 6, 5, 5, 5 V
Collector Current IC - 100 mA
Peak Collector Current ICM - 200 mA
Total Power Dissipation Ptot - 200 mW
Junction Temperature Tj - 150 C
Storage Temperature Range Tstg - -55 to +150 C
Characteristics at Ta = 25 C
DC Current Gain hFE BC846AW~BC850AW 110-220 -
DC Current Gain hFE BC846BW~BC850BW 200-450 -
DC Current Gain hFE BC846CW~BC850CW 420-800 -
Collector Base Voltage (at IC = 10 A) VCBO BC846W, BC847W, BC848W, BC849W, BC850W 80, 50, 30, 30, 50 V
Collector Emitter Voltage (at IC = 10 mA) VCEO BC846W, BC847W, BC848W, BC849W, BC850W 65, 45, 30, 30, 45 V
Emitter Base Voltage (at IE = 1 A) VEBO BC846W, BC847W, BC848W, BC849W, BC850W 6, 6, 5, 5, 5 V
Collector Base Cutoff Current (at VCB = 30 V) ICBO - -15 nA
Emitter Base Cutoff Current (at VEB = 5 V) IEBO - -100 nA
Collector Emitter Saturation Voltage (at IC = 10 mA, IB = 0.5 mA) VCE(sat) - 0.25 V
Collector Emitter Saturation Voltage (at IC = 100 mA, IB = 5 mA) VCE(sat) - 0.6 V
Base Emitter Voltage (at VCE = 5 V, IC = 2 mA) VBE - 0.58-0.7 V
Base Emitter Voltage (at VCE = 5 V, IC = 10 mA) VBE - 0.7-0.77 V
Transition Frequency (at VCE = 5 V, IC = 10 mA, f = 100 MHz) fT - 100 MHz
Collector Output Capacitance (at VCB = 10 V, IE = 0, f = 1 MHz) Cob - 4.5 pF
Dimensions (in Millimeters)
Dimension Symbol Min Max Unit
- A 0.90 1.00 mm
- A1 0.010 0.100 mm
- B 1.20 1.40 mm
- bp 0.25 0.45 mm
- C 0.09 0.15 mm
- D 2.00 2.20 mm
- E 1.15 1.35 mm
- HE 2.15 2.55 mm
- Lp 0.25 0.46 mm
- 0 6 -

2410121440_CBI-BC846CW_C21714265.pdf

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