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quality Small SOT323 Package NPN Silicon Transistor CBI MMBT2222AW Ideal for Switching and Amplifier Circuits factory
quality Small SOT323 Package NPN Silicon Transistor CBI MMBT2222AW Ideal for Switching and Amplifier Circuits factory

Small SOT323 Package NPN Silicon Transistor CBI MMBT2222AW Ideal for Switching and Amplifier Circuits

Key Attributes
Model Number: MMBT2222AW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT2222AW
Package:
SOT-323
Product Description

Product Overview

The NPN Silicon Epitaxial Planar Transistor is designed for switching and amplifier applications. It is complementary to the MMBT2907AW and is available in a small SOT-323 package. This transistor offers reliable performance for various electronic circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: NPN Silicon Epitaxial Planar Transistor
  • Complementary to: MMBT2907AW
  • Package: SOT-323
  • Marking: K3P/1P

Technical Specifications

Parameter Symbol MMBT2222W MMBT2222AW Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 60 75 V
Collector Emitter Voltage VCEO 30 40 V
Emitter Base Voltage VEBO 5 6 V
Collector Current IC 600 mA
Power Dissipation Ptot 150 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg - 55 to + 150 C
Characteristics at Ta = 25 C
DC Current Gain at VCE = 10 V, IC = 0.1 mA hFE 35 - -
DC Current Gain at VCE = 10 V, IC = 1 mA hFE 50 - -
DC Current Gain at VCE = 10 V, IC = 10 mA hFE 75 - -
DC Current Gain at VCE = 1 V, IC = 150 mA hFE 50 100 -
DC Current Gain at VCE = 10 V, IC = 150 mA hFE - 300 -
DC Current Gain at VCE = 10 V, IC = 500 mA hFE 30 40 -
Collector Base Cutoff Current at VCB = 50 V ICBO - 100 nA
Collector Base Cutoff Current at VCB = 60 V ICBO - 100 nA
Emitter Base Cutoff Current at VEB = 3 V IEBO - 100 nA
Collector Base Breakdown Voltage at IC = 10 A V(BR)CBO 60 75 V
Collector Emitter Breakdown Voltage at IC = 10 mA V(BR)CEO 30 40 V
Emitter Base Breakdown Voltage at IE = 10 A V(BR)EBO 5 6 V
Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA VCE(sat) - 0.4 V
Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA VCE(sat) - 1.6 V
Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA VBE(sat) - 0.6 V
Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA VBE(sat) - 2.6 V
Transition Frequency at VCE = 20 V, -IE = 20 mA, f = 100 MHz fT 300 - MHz
Collector Output Capacitance at VCB = 10 V, f = 100 KHz Cob - 8 pF
Delay Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA td - 10 ns
Rise Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA tr - 25 ns
Storage Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA tstg - 225 ns
Fall Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA tf - 60 ns

2410121737_CBI-MMBT2222AW_C21714179.pdf

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