Trench DMOS Technology Bruckewell MSH40N30D Dual N Channel MOSFET for Notebook and Hand Held Devices
Key Attributes
Model Number:
MSH40N30D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Number:
2 N-Channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
2.2nF
Pd - Power Dissipation:
46W
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
MSH40N30D
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH40N30D is a Dual N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide superior robustness against high energy pulses in avalanche and commutation modes. It is ideally suited for high efficiency, fast switching applications such as notebooks, load switches, and hand-held devices. The device is AEC-Q101 qualified and available in a PDFN 5X6 dual package.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Package Type: PDFN 5X6 Dual
- Certifications: AEC-Q101 qualified, RoHS Compliant
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TC =25°C) | 30 | A | |||
| ID | Continuous Drain Current (TC =100°C) | 19 | A | |||
| IDM | Pulsed Drain Current | 120 | A | |||
| IAS | Single Pulse Avalanche Current (L =0.1mH) | 36 | A | |||
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 64 | mJ | |||
| PD | Power Dissipation (TC =25°C) | 46 | W | |||
| Power Dissipation – Derate above 25°C | 0.37 | W/°C | ||||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient | (Note 1) | 62 | °C/W | ||
| RθJC | Maximum Junction-to-Case | (Note 1) | 2.7 | °C/W | ||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250μA | 1.0 | 1.6 | 2.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250μA | 40 | - | - | V |
| gfs | Forward Transconductance | VDS =10V, ID =10A | - | 13 | - | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =40V, VGS =0V, TJ =25°C | - | - | 1 | μA |
| Drain-Source Leakage Current | VDS =32V, VGS =0V, TJ =125°C | - | - | 10 | μA | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS =10V, ID =8A | - | 7.2 | 9.5 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS =4.5V, ID =4A | - | 9 | 12 | mΩ |
| EAS | Single Pulse Avalanche Energy | (Note 5) | 1.8 | - | - | mJ |
| VSD | Diode Forward Voltage | IS =1A, VGS =0V, TJ =25°C | - | - | 1.0 | V |
| IS | Continuous Source Current | (Note 1, 6) | - | - | 30 | A |
| ISM | Pulsed Source Current | (Note 2, 6) | - | - | 60 | A |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =20V ID =8A VGS =4.5V (Note 2) | - | 12.2 | 24 | nC |
| Qgs | Gate-Source Charge | (Note 2) | - | 3.3 | 7 | nC |
| Qgd | Gate-Drain Charge | (Note 2) | - | 6.7 | 13 | nC |
| td(on) | Turn-On Delay Time | VDS =15V ID =1A VGS =10V RG =3.3Ω (Note 2) | - | 13.2 | 25 | ns |
| tr | Rise Time | (Note 2) | - | 2.2 | 5 | ns |
| td(off) | Turn-Off Delay Time | (Note 2) | - | 72 | 130 | ns |
| tf | Fall Time | (Note 2) | - | 4.5 | 10 | ns |
| CISS | Input Capacitance | VDS =25V VGS =0V f =1.0MHz | - | 1220 | 2200 | pF |
| COSS | Output Capacitance | VDS =25V VGS =0V f =1.0MHz | - | 130 | 250 | pF |
| CRSS | Reverse Transfer Capacitance | VDS =25V VGS =0V f =1.0MHz | - | 55 | 110 | pF |
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | - | 2.2 | - | Ω |
| Notes | ||||||
| 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. | ||||||
| 2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%. | ||||||
| 3. The EAS data shows maximum rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=36A. | ||||||
| 4. The power dissipation is limited by 150°C junction temperature. | ||||||
| 5. The Min. value is 100% EAS tested guarantee. | ||||||
| 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. | ||||||
2412061551_Bruckewell-MSH40N30D_C42407737.pdf
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