Dual PNP Transistor in Plastic Encapsulated SOT363 Package CBI MMDT4403DW for Amplification Switching
Key Attributes
Model Number:
MMDT4403DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT4403DW
Package:
SOT-363
Product Description
Product Overview
This product features epitaxial planar die construction, making it ideal for low power amplification and switching applications. It is a dual PNP+PNP transistor housed in a plastic-encapsulated SOT-363 package.
Product Attributes
- Construction: Epitaxial Planar Die
- Package Type: SOT-363
- Encapsulation: Plastic
- Type: Dual Transistor (PNP+PNP)
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise specified) | ||||||
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -40 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current - Continuous | IC | -0.6 | A | |||
| Collector Power Dissipation | PC | 0.2 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A , IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -1mA , IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-50V, IE=0 | -0.1 | A | ||
| Collector cut-off current | ICEO | VCE=-35V, IB=0 | -0.5 | A | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -0.1 | A | ||
| DC current gain | hFE(1) | VCE=-1V, IC= -0.1mA | 30 | |||
| hFE(2) | VCE=-1V, IC= -1mA | 60 | ||||
| hFE(3) | VCE=-1 V, IC= -10mA | 100 | ||||
| hFE(4) | VCE=-2 V, IC= -150mA | 100 | 300 | |||
| hFE(5) | VCE=-2 V, IC= -500mA | 20 | ||||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-150 mA, IB=-15mA | -0.4 | V | ||
| VCE(sat)2 | IC=-500 mA, IB=-50mA | -0.75 | V | |||
| Base-emitter saturation voltage | VBE(sat)1 | IC= -150 mA, IB=-15mA | -0.75 | -0.95 | V | |
| VBE(sat)2 | IC= -500 mA, IB=-50mA | -1.3 | V | |||
| Transition frequency | fT | VCE= -10V, IC=-20mA,f = 100MHz | 200 | MHz | ||
| Output capacitance | Cob | VCB=-10V, IE=0,f=1MHz | 8.5 | pF | ||
| Delay time | td | 15 | nS | |||
| Rise time | tr | VCC=-30V, VBE=-2V,IC=-150mA , IB1=-15mA | 20 | nS | ||
| Storage time | tS | 225 | nS | |||
| Fall time | tf | VCC=-30V, IC=-150mA B1=- IB2= -15mA | 30 | nS | ||
2410121637_CBI-MMDT4403DW_C2928252.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
