PNP Transistor CBI S9012T Designed for Electronic Applications Requiring Stable hFE Linearity

Key Attributes
Model Number: S9012T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S9012T
Package:
SOT-523
Product Description

Product Overview

This PNP transistor is designed as a complementary component to the S9013T, offering excellent hFE linearity. It is suitable for various electronic applications requiring reliable transistor performance.

Product Attributes

  • MARKING: 2T1
  • Type: TRANSISTOR (PNP)
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current - Continuous -500 mA
PC Collector Power Dissipation 300 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
DC current gain hFE VCE=-1V, IC= -50mA 120 400
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
Transition frequency fT VCE=-6V, IC= -20mA, f=30MHz 150 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 5 pF

2508261745_CBI-S9012T_C2836083.pdf

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