Microwave NPN Silicon Transistor CBI MMBTSC3356W-3G Suitable for VHF UHF and CATV Band Applications
Key Attributes
Model Number:
MMBTSC3356W-3G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
3GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
MMBTSC3356W-3G
Package:
SOT-323
Product Description
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for microwave applications in the VHF, UHF, and CATV bands. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for various performance requirements. The transistor is suitable for applications requiring low noise figures and reliable performance within specified operating conditions.
Product Attributes
- Type: NPN Silicon Epitaxial Planar Transistor
- Transistor Groups: Q, R, S
- Package: SOT-323
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Group Q | Group R | Group S | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||||
| Collector Base Voltage | VCBO | 20 | V | |||
| Collector Emitter Voltage | VCEO | 12 | V | |||
| Emitter Base Voltage | VEBO | 3 | V | |||
| Collector Current | IC | 100 | mA | |||
| Power Dissipation | Ptot | 200 | mW | |||
| Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | TS | -65 to +150 | C | |||
| Characteristics (Ta = 25 C) | ||||||
| DC Current Gain | hFE | 50 | 125 | 250 | - | VCE = 10 V, IC = 20 mA |
| hFE | 80 | 160 | - | - | VCE = 10 V, IC = 20 mA | |
| Collector Cutoff Current | ICBO | - | - | 1 | A | VCB = 10 V |
| Emitter Cutoff Current | IEBO | - | - | 1 | A | VEB = 1 V |
| Gain Bandwidth Product | fT | - | 3 | - | GHz | VCE = 10 V, IC = 20 mA |
| Feed-Back Capacitance | Cre | - | 0.55 | 1 | pF | VCB = 10 V, f = 1 MHz |
| Noise Figure | NF | - | 1.1 | 2 | dB | VCE = 10 V, IC = 7 mA, f = 1 GHz |
1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
HFE Marking: Q: R23, R: R24, S: R25
2410121546_CBI-MMBTSC3356W-3G_C21714144.pdf
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