40 Volt N Channel MOSFET Bruckewell MS40N05 Featuring Low RDS ON and High Cell Density for Switching

Name: 40 Volt N Channel MOSFET Bruckewell MS40N05 Featuring Low RDS ON and High Cell Density for Switching
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MS40N05
Availability: InStock

Key Attributes

Model Number: MS40N05

Product Custom Attributes

Drain To Source Voltage:

40V

Current - Continuous Drain(Id):

RDS(on):

45mΩ@4.5V

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

2.5V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

56pF

Output Capacitance(Coss):

76pF

Pd - Power Dissipation:

1.25W

Input Capacitance(Ciss):

593pF

Gate Charge(Qg):

5.5nC@4.5V

Mfr. Part #:

MS40N05

Package:

SOT-23

Product Description

Product Overview

The MS40N05 is a high-performance trench N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Its advanced trench technology contributes to super low gate charge and excellent CdV/dt effect decline.

Product Attributes

Brand: Bruckewell Technology Corporation
Product Type: N-Channel MOSFET
Package Type: SOT-23
Certifications: RoHS Compliant, Green Device Available

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
VDS	Drain-Source Voltage				40	V
VGS	Gate-Source Voltage				±20	V
ID	Continuous Drain Current (TA =25°C)				5	A
ID	Continuous Drain Current (TA =70°C)				4.1	A
IDM	Pulsed Drain Current (TA =25°C)				16	A
PD	Power Dissipation (TA =25°C)				1.25	W
TJ/TSTG	Operating Junction and Storage Temperature		-55		+150	°C
Thermal Resistance Ratings
RθJA	Maximum Junction-to-Ambient				100	°C/W
Electrical Characteristics (TJ =25°C unless otherwise specified)
VGS (th)	Gate Threshold Voltage	VDS =VGS, ID =250µA	1.0		2.5	V
BVDSS	Drain-Source Breakdown Voltage	VGS =0V, ID =250µA	40			V
gfs	Forward Transconductance	VDS =5V, ID =4A		12		S
IGSS	Gate-Source Leakage Current	VDS =0V, VGS =±20V			±100	nA
IDSS	Drain-Source Leakage Current	VDS =32V, VGS =0V, TJ =25°C			1	µA
IDSS	Drain-Source Leakage Current	VDS =32V, VGS =0V, TJ =55°C			5	µA
RDS (on)	Static Drain-Source On-Resistance	VGS =10V, ID =4.0A			32	mΩ
RDS (on)	Static Drain-Source On-Resistance	VGS =4.5V, ID =3.0A			45	mΩ
VSD	Diode Forward Voltage	IS =1.0A, VGS =0V, TJ =25°C			1.2	V
IS	Continuous Source Current (Diode)	VG =VD =0V, Force Current			5	A
ISM	Pulsed Source Current (Diode)				16	A
Dynamic and switching Characteristics
Qg	Total Gate Charge	VDS =15V ID =3A VGS =4.5V			5.5	nC
Qgs	Gate-Source Charge			1.25
Qgd	Gate-Drain Charge			2.5
td(on)	Turn-On Delay Time	VDS =15V ID =1A VGS =4.5V RG =3.3Ω		8.9		ns
tr	Rise Time			2.2		ns
td(off)	Turn-Off Delay Time			41		ns
tf	Fall Time			2.7		ns
CISS	Input Capacitance	VDS =15V VGS =0V f =1.0MHz		593		pF
COSS	Output Capacitance			76		pF
CRSS	Reverse Transfer Capacitance			56		pF

Typical Applications

Notebook
Load Switch
Hand-held Instrument

Package Information

Package type: SOT-23

Packing: 3,000/Reel

Dimensions

REF	Millimeter (Min.)	Millimeter (Max.)	REF	Millimeter (Ref.)
A	2.70	3.10	G	1.90
B	2.30	3.00	H	0.90
C	1.20	1.75	I	0.05
D	0.30	0.50	J	0.58
E	0.01	0.15	L	0.95
F	0°	10°	N	0.20

Marking: MS40N05

2409291004_Bruckewell-MS40N05_C22465529.pdf

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40 Volt N Channel MOSFET Bruckewell MS40N05 Featuring Low RDS ON and High Cell Density for Switching