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quality Medium Power Amplification and Switching Dual Transistor CBI MMDT5551DW NPN NPN Epitaxial Planar Die factory
quality Medium Power Amplification and Switching Dual Transistor CBI MMDT5551DW NPN NPN Epitaxial Planar Die factory

Medium Power Amplification and Switching Dual Transistor CBI MMDT5551DW NPN NPN Epitaxial Planar Die

Key Attributes
Model Number: MMDT5551DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Number:
2 NPN
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMDT5551DW
Package:
SOT-363
Product Description

Product Overview

This is a DUAL TRANSISTOR (NPN+NPN) with Epitaxial Planar Die Construction. A complementary PNP type (MMDT5401) is available. It is ideal for medium power amplification and switching applications.

Product Attributes

  • Brand: CJ-ELE
  • Model: MMDT5551DW
  • Construction: Epitaxial Planar Die
  • Type: Dual Transistor (NPN+NPN)
  • Complementary PNP Type Available: MMDT5401

Technical Specifications

Parameter Symbol Condition Min Max Unit
Collector-Base Voltage V(BR)CBO IC=100A, IE=0 180 V
Collector-Emitter Voltage V(BR)CEO IC=1mA, IB=0 160 V
Emitter-Base Voltage V(BR)EBO IE=10mA, IC=0 6 V
Collector Cut-off Current ICBO VCB=120V, IE=0 0.05 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 0.05 A
DC Current Gain hFE(1) VCE=5V, IC=1mA 80
DC Current Gain hFE(2) VCE=5V, IC=10mA 100 300
DC Current Gain hFE(3) VCE=5V, IC=50mA 30
Collector-Emitter Saturation Voltage VCE(sat)1 IC=10mA, IB=1mA 0.15 V
Collector-Emitter Saturation Voltage VCE(sat)2 IC=50mA, IB=5mA 0.2 V
Base-Emitter Saturation Voltage VBE(sat)1 IC=10mA, IB=1mA 1 V
Base-Emitter Saturation Voltage VBE(sat)2 IC=50mA, IB=5mA 1 V
Transition Frequency fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF
Noise Figure NF VCE=5V, IC=0.2mA, RS=1K, f=1kHz 8 dB
Collector-Base Voltage (Max) 180 V
Collector-Emitter Voltage (Max) 160 V
Emitter-Base Voltage (Max) 6 V
Collector Current - Continuous (Max) IC 0.2 A
Collector Power Dissipation (Max) PC Tamb=25C 0.2 W
Junction Temperature (Max) Tj 150 C
Storage Temperature Tstg -55 150 C

2410010101_CBI-MMDT5551DW_C2919803.pdf

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