Silicon Schottky barrier diode CBI 1SS357 offering switching and power dissipation of 200 milliwatts
Key Attributes
Model Number:
1SS357
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
5uA@40V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
600mV@100mA
Current - Rectified:
100mA
Mfr. Part #:
1SS357
Package:
SOD-323
Product Description
Product Overview
The 1SS357 is a silicon epitaxial Schottky barrier diode designed for high-speed switching applications. It features a low forward voltage and low reverse current, making it suitable for various electronic circuits requiring efficient and rapid switching.
Product Attributes
- Marking Code: SU
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Maximum (Peak) Reverse Voltage | VRM | 45 | V | |
| Reverse Voltage | VR | 40 | V | |
| Average Forward Current | IF(AV) | 100 | mA | |
| Maximum (Peak) Forward Current | IFM | 300 | mA | |
| Surge Forward Current | IFSM | 1 | A | (10 ms) |
| Power Dissipation | Ptot | 200 | mW | (Ta = 25 OC) |
| Junction Temperature | Tj | 125 | OC | |
| Storage Temperature Range | Tstg | -55 to +125 | OC | |
| Forward Voltage | VF | 0.6 | V | at IF = 100 mA (Ta = 25 OC) |
| Reverse Current | IR | 5 | A | at VR = 40 V (Ta = 25 OC) |
| Total Capacitance | CT | 25 | pF | at VR = 0, f = 1 MHz (Ta = 25 OC) |
Simplified Outline: SOD-323
Package Outline: Plastic surface mounted package; 2 leads SOD-323
2410121313_CBI-1SS357_C2836061.pdf
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