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quality Versatile Switching Transistor CBI BC857A PNP Silicon Epitaxial in Space Saving SOT23 Plastic Package factory
quality Versatile Switching Transistor CBI BC857A PNP Silicon Epitaxial in Space Saving SOT23 Plastic Package factory

Versatile Switching Transistor CBI BC857A PNP Silicon Epitaxial in Space Saving SOT23 Plastic Package

Key Attributes
Model Number: BC857A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC857A
Package:
SOT-23
Product Description

Product Overview

The BC856BC860 series are PNP Silicon Epitaxial Transistors designed for versatile switching and amplifier applications. These transistors are housed in a compact SOT-23 plastic package, making them suitable for space-constrained designs. They offer a range of voltage and current ratings suitable for general-purpose electronic circuits.

Product Attributes

  • Package Type: SOT-23 Plastic Package

Technical Specifications

Parameter Symbol BC856 BC857, BC860 BC858, BC859 Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage -VCBO 80 50 30 V
Collector Emitter Voltage -VCEO 65 45 30 V
Emitter Base Voltage -VEBO 5 V
Collector Current -IC 100 mA
Peak Collector Current -ICM 200 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -65 to +150 C
Characteristics (Ta = 25 C)
DC Current Gain (at -VCE = 5 V, -IC = 2 mA) Group A hFE 110 - 220 - - -
DC Current Gain (at -VCE = 5 V, -IC = 2 mA) Group B hFE 200 - 450 - - -
DC Current Gain (at -VCE = 5 V, -IC = 2 mA) Group C hFE 420 - 800 - - -
Collector Base Cutoff Current (at -VCB = 30 V) -ICBO < 15 nA
Collector Base Breakdown Voltage (at -IC = 10 A) -V(BR)CBO 80 50 30 V
Collector Emitter Breakdown Voltage (at -IC = 10 A) -V(BR)CES 80 50 30 V
Collector Emitter Breakdown Voltage (at -IC = 10 mA) -V(BR)CEO 65 45 30 V
Emitter Base Breakdown Voltage (at -IE = 1 A) -V(BR)EBO 5 V
Collector Emitter Saturation Voltage (at -IC = 10 mA, -IB = 0.5 mA) -VCE(sat) < 0.3 V
Collector Emitter Saturation Voltage (at -IC = 100 mA, -IB = 5 mA) -VCE(sat) < 0.65 V
Base Emitter On Voltage (at -IC = 2 mA, -VCE = 5 V) -VBE(on) < 0.6 V
Base Emitter On Voltage (at -IC = 10 mA, -VCE = 5 V) -VBE(on) < 0.75 - 0.82 V
Current Gain Bandwidth Product (at -VCE = 5 V, -IC = 10 mA, f = 100 MHz) fT > 100 MHz
Output Capacitance (at -VCB = 10 V, f = 1 MHz) Cob < 6 pF
Noise Figure (at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 1 KHz) BC856, BC857, BC858 NF < 4 dB
Noise Figure (at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 30~15 KHz) BC859, BC860 NF < 2 dB

2410121238_CBI-BC857A_C2919766.pdf

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