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quality Plastic Encapsulated Dual Transistor Featuring CBI MMBT5451DW NPN and PNP for Amplification Switching factory
quality Plastic Encapsulated Dual Transistor Featuring CBI MMBT5451DW NPN and PNP for Amplification Switching factory

Plastic Encapsulated Dual Transistor Featuring CBI MMBT5451DW NPN and PNP for Amplification Switching

Key Attributes
Model Number: MMBT5451DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
MMBT5451DW
Package:
SOT-363
Product Description

Product Overview

This product features a plastic-encapsulated dual transistor, combining one NPN (5551) and one PNP (5401) transistor in a single package. It is constructed with an epitaxial planar die, making it ideal for low-power amplification and switching applications. The device offers robust performance with clearly defined maximum ratings and electrical characteristics for both NPN and PNP components.

Product Attributes

  • Type: Dual Transistor (NPN+PNP)
  • Construction: Epitaxial Planar Die
  • Encapsulation: Plastic
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Model/Type Parameter Symbol Test Conditions Min Typ Max Unit
NPN 5551 Collector-base breakdown voltage V(BR)CBO IC=100 A, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=10 A, IC=0 6 V
Collector cut-off current ICBO VCB=120V, IE=0 0.05 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.05 A
DC current gain hFE1 VCE=5V, IC=1mA 80
DC current gain hFE2 VCE=5V, IC=10mA 100 300
DC current gain hFE3 VCE=5V, IC=50mA 30
Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.15 V
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1 V
Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1 V
PNP 5401 Collector-base breakdown voltage V(BR)CBO IC=-100 A, IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE=-10 A, IC=0 -5 V
Collector cut-off current ICBO VCB=-120V, IE=0 -50 nA
Emitter cut-off current IEBO VEB=-3V, IC=0 -50 nA
DC current gain hFE1 VCE=-5V, IC=-1mA 50
DC current gain hFE2 VCE=-5V, IC=-10mA 100 300
DC current gain hFE3 VCE=-5V, IC=-50mA 50
Collector-emitter saturation voltage VCE(sat) IC=-10mA, IB=-1mA -0.2 V
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-10mA, IB=-1mA -1 V
Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -1 V
Common to NPN & PNP Output Capacitance Cobo VCB = 10V (NPN) / -10V (PNP), f = 1.0MHz, IE = 0 6.0 pF
Current Gain-Bandwidth Product fT VCE = 10V (NPN) / -10V (PNP), IC = 10mA, f = 100MHz 100 300 MHz
Noise Figure NF VCE= 5.0V (NPN) / -5.0V (PNP), IC = 200A, RS = 1.0k (NPN) / 10 (PNP), f = 1.0kHz 8.0 dB
Collector-Base Voltage VCBO 180 (NPN) / -160 (PNP) V
Collector-Emitter Voltage VCEO 160 (NPN) / -150 (PNP) V
Emitter-Base Voltage VEBO 6 (NPN) / -5 (PNP) V
Collector Current - Continuous IC 0.2 (NPN) / -0.2 (PNP) A
General Ratings Collector Power Dissipation PC (Ta=25C) 0.2 W
Thermal Resistance, Junction to Ambient RJA 625 C/W
Junction Temperature TJ 150 C
Storage Temperature Tstg -55 150 C

Package Outline Dimensions: SOT-363


2410121513_CBI-MMBT5451DW_C2928253.pdf

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