Epitaxial planar die transistor CBI MMDT3904V KAP suitable for amplification and switching circuits
Key Attributes
Model Number:
MMDT3904V KAP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMDT3904V KAP
Package:
SOT-563
Product Description
Product Overview
This component features an epitaxial planar die construction, making it ideal for low power amplification and switching applications. It offers reliable performance with defined voltage and current ratings, suitable for various electronic circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Construction: Epitaxial planar die
Technical Specifications
| Parameter | Conditions | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage (V(BR)CBO) | IC=10 A, IE=0 | 60 | V |
| Collector-Emitter Voltage (V(BR)CEO) | IC=1mA, IB=0 | 40 | V |
| Emitter-Base Voltage (V(BR)EBO) | IE=10 A, IC=0 | 5 | V |
| Collector Current - Continuous (IC) | - | 0.2 | A |
| Collector Power Dissipation (PC) | - | 0.2 | W |
| Junction and Storage Temperature Range (TJ) | - | -55 to +150 | C |
| Collector Cut-off Current (ICBO) | VCB=30V, IE=0 | 0.05 | A |
| Emitter Cut-off Current (IEBO) | VEB=5V, IC=0 | 0.05 | A |
| DC Current Gain (hFE) | VCE=1V, IC=0.1mA | 40 | - |
| DC Current Gain (hFE) | VCE=1V, IC=1mA | 70 | - |
| DC Current Gain (hFE) | VCE=1V, IC=10mA | 100-300 | - |
| DC Current Gain (hFE) | VCE=1V, IC=50mA | 60 | - |
| DC Current Gain (hFE) | VCE=1V, IC=100mA | 30 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)1) | IC=10mA, IB=1mA | 0.2 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)2) | IC=50mA, IB=5mA | 0.3 | V |
| Base-Emitter Saturation Voltage (VBE(sat)1) | IC=10mA, IB=1mA | 0.65-0.85 | V |
| Base-Emitter Saturation Voltage (VBE(sat)2) | IC=50mA, IB=5mA | 0.95 | V |
| Transition Frequency (fT) | VCE=20V, IC=10mA, f=100MHz | 300 | MHz |
| Output Capacitance (Cob) | VCB=5V, IE=0, f=1MHz | - | pF |
| Delay Time (td) | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=-IB2=1mA | 35 | ns |
| Rise Time (tr) | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=-IB2=1mA | 35 | ns |
| Storage Time (ts) | VCC=3V, IC=10mA, IB1=-IB2=1mA | 200 | ns |
| Fall Time (tf) | VCC=3V, IC=10mA, IB1=-IB2=1mA | 50 | ns |
| Collector Cut-off Current (IC) | VC=30V | 0.05 | A |
2410122003_CBI-MMDT3904V-KAP_C2919809.pdf
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