SOT89 plastic encapsulated PNP transistor CBI SS8550 for general purpose amplification and switching
Key Attributes
Model Number:
SS8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8550
Package:
SOT-89
Product Description
Product Overview
The SS8550 is a PNP bipolar transistor in a SOT-89 plastic-encapsulated package. It serves as a compliment to the SS8050 transistor and is marked with 'Y2'. This transistor is designed for general-purpose amplification and switching applications.
Product Attributes
- Type: PNP Transistor
- Package: SOT-89 Plastic-Encapsulate
- Marking: Y2
- Compliment to: SS8050
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | |||||
| Collector-Base Voltage | VCBO | -40 | V | ||
| Collector-Emitter Voltage | VCEO | -25 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current - Continuous | IC | -1.5 | A | ||
| Collector Power Dissipation | PC | 0.5 | W | ||
| Thermal Resistance From Junction To Ambient | RJA | 250 | /W | ||
| Junction Temperature | TJ | 150 | |||
| Storage Temperature | Tstg | -55 | 150 | ||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC= -100A, IE=0 | -40 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -0.1mA, IB=0 | -25 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100A, IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB= -40 V,IE=0 | -0.1 | A | |
| Collector cut-off current | ICEO | VCE= -20V, IB=0 | -0.1 | A | |
| Emitter cut-off current | IEBO | VEB= -5V, IC=0 | -0.1 | A | |
| DC current gain | hFE(1) | VCE= -1V, IC= -100mA | 120 | 400 | |
| DC current gain | hFE(2) | VCE= -1V, IC= -800mA | 40 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-800mA, IB= -80mA | -0.5 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=-800mA, IB= -80mA | -1.2 | V | |
| Base-emitter on voltage | VBE(on) | Ic=-1V,VCE=-10mA | -1 | V | |
| Base-emitter positive favor voltage | VBEF | IB=-1A | -1.55 | V | |
| Transition frequency | fT | VCE= -10V, IC= -50mA | 100 | MHz | |
| Output capacitance | Cob | VCB=-10V,IE=0,f=1MHz | 20 | pF | |
hFE Classification
| Rank | Range |
|---|---|
| C | 120-200 |
| D | 160-300 |
| D1 | 200-350 |
| D2 | 300-400 |
2409302203_CBI-SS8550_C2836479.pdf
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