Independent NPN NPN Silicon Epitaxial Planar Transistor CBI MMDT3052DW for Low Frequency Amplification

Key Attributes
Model Number: MMDT3052DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
200MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
MMDT3052DW
Package:
SOT-363
Product Description

Product Overview

The MMDT3052DW is a Silicon Epitaxial Planar Transistor featuring independent NPN+NPN transistor elements. It is designed for low-frequency amplification applications.

Product Attributes

  • Type: NPN+NPN Silicon Epitaxial Planar Transistor
  • Marking: 5G

Technical Specifications

Parameter Symbol Value Unit
Absolute Maximum Ratings (Ta = 25)
Collector Base Voltage VCBO 50 V
Collector Emitter Voltage VCEO 50 V
Emitter Base Voltage VEBO 6 V
Collector Current IC 200 mA
Power Dissipation Ptot 150 mW
Junction Temperature Tj 125
Storage Temperature Range Tstg -55 to +125
Electrical Characteristics (Ta = 25)
DC Current Gain at VCE = 6 V, IC = 0.1 mA hFE 90 -
DC Current Gain at VCE = 6 V, IC = 1 mA hFE 120 -
DC Current Gain at VCE = 6 V, IC = 1 mA hFE 200 -
DC Current Gain at VCE = 6 V, IC = 1 mA hFE 350 -
DC Current Gain at VCE = 6 V, IC = 1 mA hFE 240 -
DC Current Gain at VCE = 6 V, IC = 1 mA hFE 400 -
DC Current Gain at VCE = 6 V, IC = 1 mA hFE 700 -
Collector Base Cutoff Current at VCB = 50 V ICBO 100 nA
Emitter Base Cutoff Current at VEB = 6 V IEBO 100 nA
Collector Emitter Breakdown Voltage at IC = 100 A V(BR)CEO 50 V
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA VCE(sat) 0.3 V
Transition Frequency at VCE = 6 V, -IE = 10 mA fT 200 MHz
Collector Output Capacitance at VCB = 6 V, f = 1 MHz Cob 2.5 pF

2410122003_CBI-MMDT3052DW_C2928254.pdf

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