Silicon Epitaxial Planar Switching Diode CBI BAS16W with Low Forward Voltage and Fast Recovery Time
Key Attributes
Model Number:
BAS16W
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
155mA
Mfr. Part #:
BAS16W
Package:
SOT-323
Product Description
Product Overview
This is a Silicon Epitaxial Planar Switching Diode designed for ultra-high-speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for demanding electronic circuits requiring rapid switching performance.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-323 Plastic Package
- Marking Code: A6
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 °C) | ||||
| Repetitive Peak Reverse Voltage | VRRM | 85 | V | |
| Continuous Reverse Voltage | VR | 75 | V | |
| Continuous Forward Current | IF | 155 | mA | |
| Repetitive Peak Forward Current | IFRM | 500 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 4.5 (t=1µs), 1 (t=1ms), 0.5 (t=1s) | A | |
| Power Dissipation | Ptot | 200 | mW | |
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature Range | Tstg | -65 to +150 | °C | |
| Characteristics (at Ta = 25 °C) | ||||
| Forward Voltage | VF | - | mV/V | 715 mV (at IF = 1 mA), 855 mV (at IF = 10 mA), 1 V (at IF = 50 mA), 1.25 V (at IF = 150 mA) |
| Reverse Current | IR | - | nA/µA | 30 nA (at VR = 25 V), 1 µA (at VR = 75 V), 30 µA (at VR = 25 V, TJ = 150 °C), 50 µA (at VR = 75 V, TJ = 150 °C) |
| Reverse Breakdown Voltage | V(BR)R | 75 | V | at IR = 100 µA |
| Diode Capacitance | Cd | - | pF | 1.5 pF (at VR = 0, f = 1 MHz) |
| Reverse Recovery Time | trr | - | ns | 4 ns (at IF = IR = 10 mA, RL = 50 Ω) |
2410121317_CBI-BAS16W_C2919784.pdf
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