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quality PNP Silicon Epitaxial Transistor CBI BC856AT Designed for Amplifier and Switching Electronic Circuit factory
quality PNP Silicon Epitaxial Transistor CBI BC856AT Designed for Amplifier and Switching Electronic Circuit factory

PNP Silicon Epitaxial Transistor CBI BC856AT Designed for Amplifier and Switching Electronic Circuit

Key Attributes
Model Number: BC856AT
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Mfr. Part #:
BC856AT
Package:
SOT-523
Product Description

Product Overview

This PNP Silicon Epitaxial Transistor is designed for switching and amplifier applications. It offers a range of voltage and current ratings suitable for various electronic circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Epitaxial
  • Type: PNP Transistor

Technical Specifications

Parameter Symbol Model Value Unit
Collector Base Voltage (Absolute Maximum Rating) -VCBO BC856T 80 V
BC857T, BC860T 50 V
BC858T, BC859T 30 V
Collector Emitter Voltage (Absolute Maximum Rating) -VCEO BC856T 65 V
BC857T, BC860T 45 V
BC858T, BC859T 30 V
Emitter Base Voltage (Absolute Maximum Rating) -VEBO All Models 5 V
Collector Current (Absolute Maximum Rating) -IC All Models 100 mA
Peak Collector Current (Absolute Maximum Rating) -ICM All Models 200 mA
Power Dissipation (Absolute Maximum Rating) Ptot All Models 200 mW
Junction Temperature (Absolute Maximum Rating) Tj All Models 150 C
Storage Temperature Range (Absolute Maximum Rating) Tstg All Models -65 to +150 C
DC Current Gain (hFE) at -VCE = 5 V, -IC =2 mA hFE (Group A) BC856T 110 -
hFE (Group B) BC856T 200 -
hFE (Group C) BC856T 420 -
DC Current Gain (hFE) at -VCE = 5 V, -IC =2 mA hFE (Group A) BC857T, BC860T 220 -
hFE (Group B) BC857T, BC860T 450 -
hFE (Group C) BC857T, BC860T 800 -
Collector Base Cutoff Current at -VCB = 30 V -ICBO All Models - 15 nA
Collector Base Breakdown Voltage at -IC = 10 A -V(BR)CBO BC856T 80 V
BC857T, BC860T 50 V
BC858T, BC859T 30 V
Collector Emitter Breakdown Voltage at -IC = 10 A -V(BR)CES BC856T 80 V
BC857T, BC860T 50 V
BC858T, BC859T 30 V
Collector Emitter Breakdown Voltage at -IC = 10 mA -V(BR)CEO BC856T 65 V
BC857T, BC860T 45 V
BC858T, BC859T 30 V
Emitter Base Breakdown Voltage at -IE = 1 A -V(BR)EBO All Models 5 V
Collector Emitter Saturation Voltage -VCE(sat) at -IC = 10 mA, -IB = 0.5 mA - 0.3 V
at -IC = 100 mA, -IB = 5 mA - 0.65 V
Base Emitter On Voltage -VBE(on) at -IC = 2 mA, -VCE = 5 V - 0.75 V
at -IC = 10 mA, -VCE = 5 V - 0.82 V
Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz fT All Models 100 MHz
Output Capacitance at -VCB = 10 V, f = 1 MHz Cob All Models - 6 pF
MARKING CODE TYPE MARKING
3A 856AT 3A
3B 856BT 3B
3C 856CT 3C
3E 857AT 3E
3F 857BT 3F
3G 857CT 3G
3J 858AT 3J
3K 858BT 3K
3L 858CT 3L
4A 859AT 4A
4B 859BT 4B
4C 859CT 4C
4E 860AT 4E
4F 860BT 4F
4G 860CT 4G

2509181530_CBI-BC856AT_C51814224.pdf

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