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quality SOT323 packaged PNP transistor CBI BC857CW for switching and AF amplifier electronic circuit designs factory
quality SOT323 packaged PNP transistor CBI BC857CW for switching and AF amplifier electronic circuit designs factory

SOT323 packaged PNP transistor CBI BC857CW for switching and AF amplifier electronic circuit designs

Key Attributes
Model Number: BC857CW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC857CW
Package:
SOT-323
Product Description

Product Overview

These PNP transistors, encapsulated in a SOT-323 package, are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-323
  • Transistor Type: PNP

Technical Specifications

Parameter Symbol Model Value Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage -VCBO BC856W 80 V
Collector Base Voltage -VCBO BC857W, BC860W 50 V
Collector Base Voltage -VCBO BC858W, BC859W 30 V
Collector Emitter Voltage -VCEO BC856W 65 V
Collector Emitter Voltage -VCEO BC857W, BC860W 45 V
Collector Emitter Voltage -VCEO BC858W, BC859W 30 V
Emitter Base Voltage -VEBO 5 V
Collector Current -IC 100 mA
Peak Collector Current -ICM 200 mA
Power Dissipation Ptot 150 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -65 to +150 C
Characteristics at Ta = 25 C
DC Current Gain (Group A) hFE 110 - 200 -
DC Current Gain (Group B) hFE 220 - 450 -
DC Current Gain (Group C) hFE 420 - 800 -
Collector Base Cutoff Current -ICBO at -VCB = 30 V - 15 nA
Collector Base Breakdown Voltage -V(BR)CBO BC856W 80 V
Collector Base Breakdown Voltage -V(BR)CBO BC857W, BC860W 50 V
Collector Base Breakdown Voltage -V(BR)CBO BC858W, BC859W 30 V
Collector Emitter Breakdown Voltage -V(BR)CES BC856W (at -IC = 10 A) 80 V
Collector Emitter Breakdown Voltage -V(BR)CES BC857W, BC860W (at -IC = 10 A) 50 V
Collector Emitter Breakdown Voltage -V(BR)CES BC858W, BC859W (at -IC = 10 A) 30 V
Collector Emitter Breakdown Voltage -V(BR)CEO BC856W (at -IC = 10 mA) 65 V
Collector Emitter Breakdown Voltage -V(BR)CEO BC857W, BC860W (at -IC = 10 mA) 45 V
Collector Emitter Breakdown Voltage -V(BR)CEO BC858W, BC859W (at -IC = 10 mA) 30 V
Emitter Base Breakdown Voltage -V(BR)EBO at -IE = 1 A 5 V
Collector Emitter Saturation Voltage -VCE(sat) at -IC = 10 mA, -IB = 0.5 mA - 0.3 V
Collector Emitter Saturation Voltage -VCE(sat) at -IC = 100 mA, -IB = 5 mA - 0.65 V
Base Emitter On Voltage -VBE(on) at -IC = 2 mA, -VCE = 5 V 0.6 - 0.75 V
Base Emitter On Voltage -VBE(on) at -IC = 10 mA, -VCE = 5 V - 0.82 V
Current Gain Bandwidth Product fT at -VCE = 5 V, -IC = 10 mA, f = 100 MHz 100 MHz
Output Capacitance Cob at -VCB = 10 V, f = 1 MHz - 6 pF
Package Outline SOT-323 Dimensions (Millimeters)
Symbol Dimension Min Max
A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
0 6

2410121615_CBI-BC857CW_C21714268.pdf

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