Electronic Component PNP Transistor Semiconductor Device Collector Current 05A CBI S8550W
Key Attributes
Model Number:
S8550W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8550W
Package:
SOT323
Product Description
Product Overview
This PNP transistor, complementary to the S8050, offers a collector current of 0.5A. It is suitable for various electronic applications requiring a PNP semiconductor component. The device is marked as 2TY and comes in a SOT-323 package.
Product Attributes
- Marking: 2TY
- Package: SOT-323
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Units |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (TA=25 unless otherwise noted) | |||||
| Collector-Base Voltage | VCBO | -40 | V | ||
| Collector-Emitter Voltage | VCEO | -25 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current - Continuous | IC | -0.5 | A | ||
| Collector Power Dissipation | PC | 0.3 | W | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | 150 | ||
| ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC = -100A, IE=0 | -40 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-1mA, IB=0 | -25 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100A, IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB= -40V, IE=0 | -0.1 | A | |
| Collector cut-off current | ICEO | VCE= -20V, IB=0 | -0.1 | A | |
| Emitter cut-off current | IEBO | VEB= -3V, IC=0 | -0.1 | A | |
| DC current gain | hFE(1) | VCE= -1V, IC= -50mA | 120 | 400 | |
| DC current gain | hFE(2) | VCE= -1V, IC= -500mA | 50 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA, IB= -50mA | -0.6 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=-500mA, IB= -50mA | -1.2 | V | |
| Transition frequency | fT | VCE= -6V, IC= -20mA, f=30MHz | 150 | MHz | |
| CLASSIFICATION OF hFE(1) | |
|---|---|
| Rank | Range |
| L | 120-200 |
| H | 200-350 |
| J | 300-400 |
2410121503_CBI-S8550W_C5362108.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
