Microwave Application NPN Transistor CBI MMBTSC3356-7G in SOT23 Plastic Package for VHF UHF CATV Bands

Key Attributes
Model Number: MMBTSC3356-7G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
7GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
MMBTSC3356-7G
Package:
SOT-23
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for microwave applications across VHF, UHF, and CATV bands. It is subdivided into three gain groups (Q, R, S) for tailored performance. The transistor features a SOT-23 plastic package, making it suitable for surface-mounted applications.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Package: SOT-23 Plastic Package
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.
  • Marking: Q (R23), R (R24), S (R25)

Technical Specifications

Parameter Symbol Group Q Group R Group S Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 20 V
Collector Emitter Voltage VCEO 12 V
Emitter Base Voltage VEBO 3 V
Collector Current IC 100 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Ts -65 to +150 C
Characteristics (Ta = 25 C)
DC Current Gain at VCE = 10 V, IC = 20 mA hFE 50 80 125 -
Collector Cutoff Current at VCB = 10 V ICBO - 1 A
Emitter Cutoff Current at VEB = 1 V IEBO - 1 A
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA fT 7 - GHz
Feed-Back Capacitance at VCB = 10 V, f = 1 MHz Cre 1) 0.55 1 pF
Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz NF 1.1 2 dB

1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.


2410121839_CBI-MMBTSC3356-7G_C21714194.pdf

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