Microwave Application NPN Transistor CBI MMBTSC3356-7G in SOT23 Plastic Package for VHF UHF CATV Bands
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for microwave applications across VHF, UHF, and CATV bands. It is subdivided into three gain groups (Q, R, S) for tailored performance. The transistor features a SOT-23 plastic package, making it suitable for surface-mounted applications.
Product Attributes
- Type: NPN Silicon Epitaxial Planar Transistor
- Package: SOT-23 Plastic Package
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Marking: Q (R23), R (R24), S (R25)
Technical Specifications
| Parameter | Symbol | Group Q | Group R | Group S | Unit | |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||||
| Collector Base Voltage | VCBO | 20 | V | |||
| Collector Emitter Voltage | VCEO | 12 | V | |||
| Emitter Base Voltage | VEBO | 3 | V | |||
| Collector Current | IC | 100 | mA | |||
| Power Dissipation | Ptot | 200 | mW | |||
| Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | Ts | -65 to +150 | C | |||
| Characteristics (Ta = 25 C) | ||||||
| DC Current Gain at VCE = 10 V, IC = 20 mA | hFE | 50 | 80 | 125 | - | |
| Collector Cutoff Current at VCB = 10 V | ICBO | - | 1 | A | ||
| Emitter Cutoff Current at VEB = 1 V | IEBO | - | 1 | A | ||
| Gain Bandwidth Product at VCE = 10 V, IC = 20 mA | fT | 7 | - | GHz | ||
| Feed-Back Capacitance at VCB = 10 V, f = 1 MHz | Cre 1) | 0.55 | 1 | pF | ||
| Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz | NF | 1.1 | 2 | dB | ||
1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
2410121839_CBI-MMBTSC3356-7G_C21714194.pdf
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