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quality NPN Silicon Epitaxial Planar Transistor CBI MMUN2231 Designed for Switching and Interface Circuit factory
quality NPN Silicon Epitaxial Planar Transistor CBI MMUN2231 Designed for Switching and Interface Circuit factory

NPN Silicon Epitaxial Planar Transistor CBI MMUN2231 Designed for Switching and Interface Circuit

Key Attributes
Model Number: MMUN2231
Product Custom Attributes
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN2231
Package:
SOT-23
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching, interface circuit, and drive circuit applications. It features integrated resistors for base and emitter, simplifying circuit design and reducing component count. Available in a SOT-23 plastic package, these transistors offer reliable performance for various electronic systems.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Epitaxial Planar
  • Package: SOT-23 Plastic Package

Technical Specifications

Model R1 (Input) (K) R2 (Collector) (K) Marking VCEsat (V) at IC=10mA, IB=0.3mA VCEsat (V) at IC=10mA, IB=5mA VCEsat (V) at IC=10mA, IB=1mA hFE at VCE=10V, IC=5mA (Min.) IEBO (mA) at VEB=6V (Max.) VOL (V) at VCC=5V, RL=1K VOH (V) at VCC=5V, RL=1K R1 (K) R1/R2
MMUN2211 10 10 A8B - - - 35 0.5 0.2 4.9 7 0.8
MMUN2212 22 22 A8A - - - 60 0.2 0.2 4.9 15.4 0.17
MMUN2213 47 47 A8C - - - 80 0.1 - - 32.9 0.25
MMUN2214 10 47 A8D - - - 80 0.2 0.2 4.9 7 0.17
MMUN2215 10 A8E 0.25 - - 160 0.9 0.2 4.9 7 0.8
MMUN2216 4.7 A8F 0.25 - - 160 1.9 0.2 4.9 3.3 0.055
MMUN2230 1 1 A8G 0.25 0.25 - 3 4.3 0.2 4.9 0.7 1.2
MMUN2231 2.2 2.2 A8H 0.25 0.25 - 8 2.3 0.2 4.9 1.5 0.25
MMUN2232 4.7 4.7 A8J 0.25 0.25 - 15 1.5 0.2 4.9 3.3 0.185
MMUN2233 4.7 47 A8K 0.25 0.25 - 80 0.18 0.2 4.9 3.3 0.056
MMUN2234 22 47 A8L 0.25 0.25 - 80 0.13 0.2 4.9 15.4 0.38
MMUN2235 2.2 47 A8M 0.25 0.25 - 80 0.2 0.2 4.9 1.54 0.038
MMUN2238 2.2 A8R 0.25 - - 160 4 0.2 4.9 1.54 0.055
MMUN2241 100 A8U - - - 160 0.1 0.2 - 70 -
Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit
Collector Base Voltage VCBO 50 V
Collector Emitter Voltage VCEO 50 V
Collector Current IC 100 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range TS -55 to +150 C
Characteristics (Ta = 25 C) Symbol Value Unit
Collector Base Breakdown Voltage (at IC = 10 A) V(BR)CBO 50 V
Collector Emitter Breakdown Voltage (at IC = 2 mA) V(BR)CEO 50 V
Collector Base Cutoff Current (at VCB = 50 V) ICBO -100 nA
Collector Emitter Cutoff Current (at VCE = 50 V) ICEO -500 nA

2509181520_CBI-MMUN2231_C51822255.pdf

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