Dual transistor PNP PNP CBI MMDT3906DW epitaxial planar die in SOT 363 package suitable for circuits
Key Attributes
Model Number:
MMDT3906DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMDT3906DW
Package:
SOT-363
Product Description
Product Overview
This is a SOT-363 plastic-encapsulated dual transistor (PNP+PNP) designed for low power amplification and switching applications. It features epitaxial planar die construction and is suitable for various electronic circuits requiring PNP transistor functionality.
Product Attributes
- Package Type: SOT-363
- Construction: Epitaxial planar die
- Type: Dual Transistor (PNP+PNP)
- Marking: K3N
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Units |
|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -40 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current - Continuous | IC | -0.2 | A | |
| Collector Power Dissipation | PC | 0.2 | W | |
| Thermal Resistance, Junction to Ambient Air | RJA | 625 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | Tstg | -55-150 | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A,IE=0 | -40 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -40 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V |
| Collector cut-off current | ICEX | VCE=-30V,VEB(OFF)=-3V | -50 | nA |
| Base cut-off current | IEBO | VEB=-5V,IC=0 | -50 | nA |
| DC current gain | hFE(1) | VCE=-1V,IC=-0.1mA | 60 | |
| hFE(2) | VCE=-1V,IC=-1mA | 80 | ||
| hFE(3) | VCE=-1V,IC=-10mA | 100-300 | ||
| hFE(4) | VCE=-1V,IC=-50mA | 60 | ||
| hFE(5) | VCE=-1V,IC=-100mA | 30 | ||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-10mA,IB=-1mA | -0.25 | V |
| VCE(sat)2 | IC=-50mA,IB=-5mA | -0.4 | V | |
| Base-emitter saturation voltage | VBE(sat)1 | IC=-10mA,IB=-1mA | -0.65 -0.85 | V |
| VBE(sat)2 | IC=-50mA,IB=-5mA | -0.95 | V | |
| Transition frequency | fT | VCE=-20V,IC=-10mA,f=100MHz | 250 | MHz |
| Collector output capacitance | Cob | VCB=-5V,IE=0,f=1MHz | 4.5 | pF |
| Noise figure | NF | VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1K | 4 | dB |
| Delay time | td | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS |
| Rise time | tr | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS |
| Storage time | tS | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 225 | nS |
| Fall time | tf | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 75 | nS |
2410121257_CBI-MMDT3906DW_C2836075.pdf
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