Switching Interface and Drive Circuit Transistor CBI MMBTRA104SS PNP Silicon Epitaxial Planar Type

Key Attributes
Model Number: MMBTRA104SS
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
47kΩ
Resistor Ratio:
1
Mfr. Part #:
MMBTRA104SS
Package:
SOT-23
Product Description

Product Overview

This series of PNP Silicon Epitaxial Planar Transistors is designed for switching and interface circuit applications, as well as drive circuit applications. They offer a range of models with varying R1 and R2 resistor values, catering to diverse performance requirements.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: PNP Silicon Epitaxial Planar Transistor

Technical Specifications

Model R1 (K) R2 (K) Base (Input) Collector (Output) Emitter (Common)
MMBTRA101SS 4.101 7.4 Input Output Common
MMBTRA102SS 1.102 0.10 Input Output Common
MMBTRA103SS 2.103 2.22 Input Output Common
MMBTRA104SS 4.104 7.47 Input Output Common
MMBTRA105SS 2.105 2.47 Input Output Common
MMBTRA106SS 4.106 7.47 Input Output Common

Absolute Maximum Ratings (Ta = 25 C)

Parameter Symbol Value Unit
Output Voltage -VO 50 V
Input Voltage MMBTRA101SS -VI 20, -10 V
Input Voltage MMBTRA102SS -VI 30, -10 V
Input Voltage MMBTRA103SS -VI 40, -10 V
Input Voltage MMBTRA104SS -VI 40, -10 V
Input Voltage MMBTRA105SS -VI 12, -5 V
Input Voltage MMBTRA106SS -VI 20, -5 V
Output Current -IO 100 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C

Characteristics at Ta = 25 C

Parameter Symbol MMBTRA101SS MMBTRA102SS MMBTRA103SS MMBTRA104SS MMBTRA105SS MMBTRA106SS Unit
DC Current Gain at -VO = 5 V, -IO = 10 mA GI 30 50 70 80 80 80 -
Output Cutoff Current at -VO = 50 V -IO(OFF) - - - - - - 500 nA
Input Current at -VI = 5 V -II 1.8 0.88 0.36 0.18 3.6 1.8 mA
Output Voltage at -IO = 10 mA, -II = 0.5 mA -VO(ON) - - - - - - 0.3 V
Input Voltage (ON) at -VO = 0.2 V, -IO = 5 mA -VI(ON) 2 2.4 3 5 1.1 1.3 V
Input Voltage (OFF) at -VO = 5 V, -IO = 0.1 mA -VI(OFF) 1 1 1 1 0.5 0.5 V
Transition Frequency at -VO = 10 V, -IO = 5 mA fT - - - - - - 200 MHz

1) Characteristic of transistor only.


2509181520_CBI-MMBTRA104SS_C51814210.pdf

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