NPN Silicon Epitaxial Planar Transistor CBI MMBT2907AW for Switching Amplifier Applications
Key Attributes
Model Number:
MMBT2907AW
Product Custom Attributes
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Mfr. Part #:
MMBT2907AW
Package:
SOT-323
Product Description
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for switching and amplifier applications. It serves as a complementary component to the MMBT2907AW and is available in a small package. The transistor is suitable for various electronic circuits requiring reliable switching and amplification capabilities.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: NPN Silicon Epitaxial Planar Transistor
- Marking: K3P/1P
Technical Specifications
| Parameter | Symbol | MMBT2222W | MMBT2222AW | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||
| Collector Base Voltage | VCBO | 60 | 75 | V |
| Collector Emitter Voltage | VCEO | 30 | 40 | V |
| Emitter Base Voltage | VEBO | 5 | 6 | V |
| Collector Current | IC | 600 | mA | |
| Power Dissipation | Ptot | 150 | mW | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -55 to +150 | C | |
| Characteristics at Ta = 25 C | ||||
| DC Current Gain at VCE = 10 V, IC = 0.1 mA | hFE | 35 | - | - |
| DC Current Gain at VCE = 10 V, IC = 1 mA | hFE | 50 | - | - |
| DC Current Gain at VCE = 10 V, IC = 10 mA | hFE | 75 | - | - |
| DC Current Gain at VCE = 1 V, IC = 150 mA | hFE | 50 | - | - |
| DC Current Gain at VCE = 10 V, IC = 150 mA | hFE | 100 | 300 | - |
| DC Current Gain at VCE = 10 V, IC = 500 mA | hFE | 30 | - | - |
| DC Current Gain at VCE = 10 V, IC = 500 mA | hFE | 40 | - | - |
| Collector Base Cutoff Current at VCB = 50 V | ICBO | - | 100 | nA |
| Collector Base Cutoff Current at VCB = 60 V | ICBO | - | 100 | nA |
| Emitter Base Cutoff Current at VEB = 3 V | IEBO | - | 100 | nA |
| Collector Base Breakdown Voltage at IC = 10 A | V(BR)CBO | 60 | 75 | V |
| Collector Emitter Breakdown Voltage at IC = 10 mA | V(BR)CEO | 30 | 40 | V |
| Emitter Base Breakdown Voltage at IE = 10 A | V(BR)EBO | 5 | 6 | V |
| Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA | VCE(sat) | - | 0.4 | V |
| Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA | VCE(sat) | - | 1.6 | V |
| Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA | VBE(sat) | - | 0.6 | V |
| Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA | VBE(sat) | - | 2.6 | V |
| Transition Frequency at VCE = 20 V, -IE = 20 mA, f = 100 MHz | fT | 300 | - | MHz |
| Collector Output Capacitance at VCB = 10 V, f = 100 KHz | Cob | - | 8 | pF |
| Delay Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA | td | - | 10 | ns |
| Rise Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA | tr | - | 25 | ns |
| Storage Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA | tstg | - | 225 | ns |
| Fall Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA | tf | - | 60 | ns |
Package Information
| Package Type | Outline Dimensions |
|---|---|
| SOT-323 | Refer to page 4 of datasheet |
2410121737_CBI-MMBT2907AW_C21714269.pdf
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