Dual digital transistor CBI UMH3N with integrated DTC143T chips providing interference free and operation
Key Attributes
Model Number:
UMH3N
Product Custom Attributes
Mfr. Part #:
UMH3N
Package:
SOT-363
Product Description
Product Overview
This product features two independent DTC143T digital transistor chips integrated into a single package, offering dual digital transistor functionality (NPN+NPN). The independent nature of the transistor elements eliminates interference, leading to improved performance. This integrated design significantly reduces mounting costs and required board area by half. It is suitable for applications requiring compact and reliable digital transistor solutions.
Product Attributes
- Type: Digital Transistors (Built-in Resistors), Dual Digital Transistors (NPN+NPN)
- Marking: H3
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||
| Collector-base voltage | V(BR)CBO | 50 | V | |
| Collector-emitter voltage | V(BR)CEO | 50 | V | |
| Emitter-base voltage | V(BR)EBO | 5 | V | |
| Collector current | IC | 100 | mA | |
| Collector Power dissipation | PC | 150 | mW | |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55~150 | ||
| Electrical Characteristics (Ta=25) | ||||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | Ic=50A |
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | Ic=1mA |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=50A |
| Collector cut-off current | ICBO | 0.5 | A | VCB=50V |
| Emitter cut-off current | IEBO | 0.5 | A | VEB=4V |
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=5mA, IB=0.25mA |
| DC current transfer ratio | hFE | 100 ~ 600 | VCE=5V, IC=1mA | |
| Input resistance | R1 | 3.29 ~ 6.11 | K | VCE=5V, Ta=100 / Ta=25 |
| Transition frequency | fT | 250 | MHz | VCE=10V ,IE=-5mA,f=100MHz |
2510101615_CBI-UMH3N_C51315483.pdf
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