86--136 6733 2386
quality Dual Bias Resistor Transistor MMUN5211DW NPN Silicon Surface Mount Device for Space Saving Circuits factory
quality Dual Bias Resistor Transistor MMUN5211DW NPN Silicon Surface Mount Device for Space Saving Circuits factory

Dual Bias Resistor Transistor MMUN5211DW NPN Silicon Surface Mount Device for Space Saving Circuits

Key Attributes
Model Number: MMUN5211DW
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN5211DW
Package:
SOT-363
Product Description

Product Overview

The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing external bias components. This series is designed for low-power surface mount applications where board space is limited, offering advantages such as simplified circuit design, reduced board space, and decreased component count. The devices are compliant with RoHS requirements.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material Compliance: RoHS
  • Package Type: SOT-363

Technical Specifications

Model Device Marking R1 (K) R2 (K) Shipping hFE (Min) IEBO (Max) R1 (K) (Resistor Value) R1/R2 (Resistor Ratio)
MMUN5211DW 7A 10 10 3000/Tape&Reel 35 0.5 mA 7 0.8
MMUN5212DW 7B 22 22 3000/Tape&Reel 60 0.2 mA 15.4 0.8
MMUN5213DW 7C 47 47 3000/Tape&Reel 80 0.1 mA 32.9 0.17
MMUN5214DW 7D 10 47 3000/Tape&Reel 80 0.2 mA 7 0.17
MMUN5215DW 7E 10 - 3000/Tape&Reel 160 0.9 mA 7 -
MMUN5216DW 7F 4.7 - 3000/Tape&Reel 160 1.9 mA 3.3 -
MMUN5230DW 7G 1 1 3000/Tape&Reel 3 4.3 mA 0.7 0.8
MMUN5231DW 7H 2.2 2.2 3000/Tape&Reel 8 2.3 mA 1.5 0.8
MMUN5232DW 7J 4.7 4.7 3000/Tape&Reel 15 1.5 mA 3.3 0.8
MMUN5233DW 7K 4.7 47 3000/Tape&Reel 80 0.18 mA 3.3 0.055
MMUN5234DW 7L 22 47 3000/Tape&Reel 80 0.13 mA 15.4 0.38
MMUN5235DW 7M 2.2 47 3000/Tape&Reel 80 0.2 mA 1.54 0.038
MMUN5238DW 7Q 2.2 - 3000/Tape&Reel 160 4 mA 1.54 -
MMUN5241DW 7T 100 - 3000/Tape&Reel 160 0.1 mA 70 -
Maximum Ratings (TA = 25C unless otherwise noted)
Collector-Base Voltage (VCBO) 50 Vdc
Collector-Emitter Voltage (VCEO) 50 Vdc
Collector Current (IC) 100 mAdc
Thermal Characteristics
Total Device Dissipation (PD) (One Junction Heated, TA= 25C) 187 mW (Note 1)
Derate above 25C (One Junction Heated) 1.5 mW/C (Note 1)
Junction-to-Ambient Thermal Resistance (RJA) (One Junction Heated) 670 C/W (Note 1)
Total Device Dissipation (PD) (Both Junctions Heated, TA= 25C) 250 mW (Note 1)
Derate above 25C (Both Junctions Heated) 2.0 mW/C (Note 1)
Junction-to-Ambient Thermal Resistance (RJA) (Both Junctions Heated) 493 C/W (Note 1)
Junction-to-Lead Thermal Resistance (RJL) (Both Junctions Heated) 188 C/W (Note 1)
Junction and Storage Temperature (TJ, Tstg) 55 to +150 C
Electrical Characteristics (TA= 25C unless otherwise noted)
Collector Base Cutoff Current (ICBO) at VCB = 50 V 100 nA
Collector Emitter Cutoff Current (ICEO) at VCE = 50 V 500 nA
Collector Base Breakdown Voltage (V(BR)CBO) at IC = 10 A 50 V
Collector Emitter Breakdown Voltage (V(BR)CEO) at IC = 2 mA 50 V
Output Voltage (on) (VOL) at VCC = 5 V, RL = 1 K 0.2 V (Typical)
Output Voltage (off) (VOH) at VCC = 5 V, RL = 1 K 4.9 V (Typical)

2410121707_CBI-MMUN5211DW_C21714278.pdf

Related Products
quality Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic factory
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
quality Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications factory
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
quality Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS factory
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
quality Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification factory
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.