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quality Electronic switching transistor CBI MMBT2222A NPN epitaxial planar die type in compact SOT23 package factory
quality Electronic switching transistor CBI MMBT2222A NPN epitaxial planar die type in compact SOT23 package factory

Electronic switching transistor CBI MMBT2222A NPN epitaxial planar die type in compact SOT23 package

Key Attributes
Model Number: MMBT2222A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT2222A
Package:
SOT-23
Product Description

Product Overview

The MMBT2222A is an NPN epitaxial planar die construction transistor. It features a complementary PNP type available (MMBT2907A). This transistor is housed in a SOT-23 package, a plastic surface-mounted package with 3 leads. It is suitable for various electronic applications requiring reliable switching and amplification.

Product Attributes

  • Type: NPN Transistor
  • Construction: Epitaxial planar die
  • Complementary Type: MMBT2907A (PNP)
  • Package: SOT-23 (Plastic surface mounted, 3 leads)
  • Marking: 1P

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Units
Maximum Ratings (Ta=25 unless otherwise noted)
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current - Continuous 600 mA
PC Collector Dissipation 250 mW
RJA Thermal Resistance, Junction to Ambient 500 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
Electrical Characteristics (Ta=25 unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC= 10A, IE=0 75 V
V(BR)CEO * Collector-emitter breakdown voltage IC= 10mA, IB=0 40 V
V(BR)EBO Emitter-base breakdown voltage IE=10A, IC=0 6 V
ICBO Collector cut-off current VCB=60V, IE=0 0.01 A
ICEX Collector cut-off current VCE=30V, VBE(off)=3V 0.01 A
IEBO Emitter cut-off current VEB= 3V, IC=0 0.1 A
hFE(1) * DC current gain VCE=10V, IC= 150mA 100 300
hFE(2) DC current gain VCE=10V, IC= 0.1mA 40
hFE(3) * DC current gain VCE=10V, IC= 500mA 42
VCE(sat) * Collector-emitter saturation voltage IC=500 mA, IB= 50mA 1 V
VCE(sat) * Collector-emitter saturation voltage IC=150 mA, IB=15mA 0.3 V
VBE(sat) * Base-emitter saturation voltage IC=500 mA, IB= 50mA 2.0 V
VBE(sat) * Base-emitter saturation voltage IC=150 mA, IB=15mA 1.2 V
fT Transition frequency VCE=20V, IC= 20mA, f=100MHz 300 MHz
td Delay time 10 nS
tr Rise time VCC=30V, VBE(off)=-0.5V, IC=150mA , IB1= 15mA 25 nS
tS Storage time VCC=30V, IC=150mA, IB1=-IB2=15mA 225 nS
tf Fall time VCC=30V, IC=150mA, IB1=-IB2=15mA 60 nS
*pulse test: Pulse Width 300s, Duty Cycle 2.0%.

2409272232_CBI-MMBT2222A_C2828457.pdf

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