High Output Current PNP Silicon Epitaxial Planar Transistor CBI MMBTRA226S with Built in Bias Resistors
PNP Silicon Epitaxial Planar Transistor
Product Overview
This PNP Silicon Epitaxial Planar Transistor is designed for high current switching, interface circuit, and driver circuit applications. It features built-in bias resistors, which simplify circuit design, reduce the quantity of parts, and streamline the manufacturing process. The transistor offers high output current capabilities, making it suitable for demanding electronic applications.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
Technical Specifications
| Model | Base Resistor (R1) (K) | Collector Resistor (R2) (K) | Output Voltage (VO) (V) | Input Voltage (VI) (V) | Output Current (IO) (mA) | Total Power Dissipation (Ptot) (mW) | Junction Temperature (Tj) (C) | Storage Temperature Range (Tstg) (C) | DC Current Gain (GI) (Min) | Output Cutoff Current (IO(OFF)) (Max) (A) | Input Current (II) (Typ) (mA) | Output Voltage ON (VO(ON)) (Typ) (V) | Input Voltage ON (VI(ON)) (Typ) (V) | Input Voltage OFF (VI(OFF)) (Typ) (V) | Transition Frequency (fT) (Typ) (MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMBTRA221S | 1 | 1 | -50 | -50 | -800 | 200 | 150 | -55 to +150 | 33 | 10 | 7.2 | 0.3 | 3 | 0.5 | 200 |
| MMBTRA222S | 2.2 | 2.2 | -50 | -50 | -800 | 200 | 150 | -55 to +150 | 39 | 10 | 3.8 | 0.3 | 3 | 0.5 | 200 |
| MMBTRA223S | 4.7 | 4.7 | -50 | -50 | -800 | 200 | 150 | -55 to +150 | 47 | 10 | 1.8 | 0.3 | 3 | 0.5 | 200 |
| MMBTRA224S | 10 | 10 | -50 | -50 | -800 | 200 | 150 | -55 to +150 | 56 | 10 | 0.88 | 0.3 | 3 | 0.5 | 200 |
| MMBTRA225S | 1 | 10 | -50 | -50 | -800 | 200 | 150 | -55 to +150 | 56 | 10 | 7.2 | 0.3 | 3 | 0.3 | 200 |
| MMBTRA226S | 2.2 | 10 | -50 | -50 | -800 | 200 | 150 | -55 to +150 | 56 | 10 | 3.6 | 0.3 | 2 | 0.3 | 200 |
2509181520_CBI-MMBTRA226S_C51814183.pdf
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