SOT23 Package PNP Silicon Epitaxial Transistor CBI BC858C Ideal for Switching and Amplifier Circuits
Key Attributes
Model Number:
BC858C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Mfr. Part #:
BC858C
Package:
SOT-23
Product Description
Product Overview
This document details PNP Silicon Epitaxial Transistors designed for switching and amplifier applications. These transistors are housed in a SOT-23 plastic package. They offer a range of models with varying voltage and current gain characteristics, suitable for diverse electronic circuit designs.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
- Material: Silicon Epitaxial Transistor
Technical Specifications
| Absolute Maximum Ratings (Ta = 25 C) | Symbol | Value | Unit | |
|---|---|---|---|---|
| Collector Base Voltage | BC856 | -VCBO | 80 | V |
| BC857, BC860 | -VCBO | 50 | V | |
| BC858, BC859 | -VCBO | 30 | V | |
| Collector Emitter Voltage | BC856 | -VCEO | 65 | V |
| BC857, BC860 | -VCEO | 45 | V | |
| BC858, BC859 | -VCEO | 30 | V | |
| Emitter Base Voltage | -VEBO | 5 | V | |
| Collector Current | -IC | 100 | mA | |
| Peak Collector Current | -ICM | 200 | mA | |
| Power Dissipation | Ptot | 200 | mW | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -65 to +150 | C | |
| Characteristics at Ta = 25 C | Symbol | Min. | Max. | Unit | |
|---|---|---|---|---|---|
| DC Current Gain | Group A | hFE | 110 | 220 | - |
| Group B | hFE | 200 | 450 | - | |
| Group C | hFE | 420 | 800 | - | |
| Collector Base Cutoff Current (-VCB = 30 V) | -ICBO | - | 15 | nA | |
| Collector Base Breakdown Voltage (-IC = 10 A) | BC856 | -V(BR)CBO | 80 | - | V |
| BC857, BC860 | -V(BR)CBO | 50 | - | V | |
| BC858, BC859 | -V(BR)CBO | 30 | - | V | |
| Collector Emitter Breakdown Voltage (-IC = 10 A) | BC856 | -V(BR)CES | 80 | - | V |
| BC857, BC860 | -V(BR)CES | 50 | - | V | |
| BC858, BC859 | -V(BR)CES | 30 | - | V | |
| Collector Emitter Breakdown Voltage (-IC = 10 mA) | BC856 | -V(BR)CEO | 65 | - | V |
| BC857, BC860 | -V(BR)CEO | 45 | - | V | |
| BC858, BC859 | -V(BR)CEO | 30 | - | V | |
| Emitter Base Breakdown Voltage (-IE = 1 A) | -V(BR)EBO | 5 | - | V | |
| Collector Emitter Saturation Voltage | (-IC = 10 mA, -IB = 0.5 mA) | -VCE(sat) | - | 0.3 | V |
| (-IC = 100 mA, -IB = 5 mA) | -VCE(sat) | - | 0.65 | V | |
| Base Emitter On Voltage | (-IC = 2 mA, -VCE = 5 V) | -VBE(on) | 0.6 | - | V |
| (-IC = 10 mA, -VCE = 5 V) | -VBE(on) | 0.75 | 0.82 | V | |
| Current Gain Bandwidth Product (-VCE = 5 V, -IC = 10 mA, f = 100 MHz) | fT | 100 | - | MHz | |
| Output Capacitance (-VCB = 10 V, f = 1 MHz) | Cob | - | 6 | pF | |
| Noise Figure | BC856, BC857, BC858 (RG = 2 K, f = 1 KHz) | NF | - | 4 | dB |
| BC859, BC860 (RG = 2 K, f = 30 ~15 KHz) | NF | - | 2 | dB | |
| SOT-23 Package Dimensions | Symbol | Min | Max | Unit | |
|---|---|---|---|---|---|
| A | 0.90 | 1.10 | mm | ||
| A1 | 0.013 | 0.100 | mm | ||
| B | 1.80 | 2.00 | mm | ||
| bp | 0.35 | 0.50 | mm | ||
| C | 0.09 | 0.150 | mm | ||
| D | 2.80 | 3.00 | mm | ||
| E | 1.20 | 1.40 | mm | ||
| HE | 2.20 | 2.80 | mm | ||
| Lp | 0.20 | 0.50 | mm | ||
| 0 | 5 | - | |||
| MARKING CODE | TYPE | MARKING |
|---|---|---|
| 856A | BC856 | 3A |
| 856B | BC856 | 3B |
| 856C | BC856 | 3C |
| 857A | BC857 | 3E |
| 857B | BC857 | 3F |
| 857C | BC857 | 3G |
| 858A | BC858 | 3J |
| 858B | BC858 | 3K |
| 858C | BC858 | 3L |
| 859A | BC859 | 4A |
| 859B | BC859 | 4B |
| 859C | BC859 | 4C |
| 860A | BC860 | 4E |
| 860B | BC860 | 4F |
| 860C | BC860 | 4G |
2410121636_CBI-BC858C_C21714247.pdf
Related Products
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
