PNP transistor CBI MMBT5401 suitable for medium power amplification and switching electronic devices

Key Attributes
Model Number: MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description

Product Overview

The MMBT5401 is a PNP transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5551 transistor.

Product Attributes

  • Marking: 2L
  • Package: SOT-23 (Plastic surface mounted package; 3 leads)

Technical Specifications

Parameter Symbol Test Conditions Min Max Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -0.6 A
Collector Power Dissipation PC 0.3 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-120 V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 A
DC current gain hFE1 VCE= -5V, IC= -1mA 80
hFE2 VCE= -5V, IC=-10mA 100 300
hFE3 VCE= -5V, IC=-50mA 50
Collector-emitter saturation voltage VCE(sat) IC=-50 mA, IB= -5mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC= -50 mA, IB= -5mA -1 V
Transition frequency fT VCE= -5V, IC= -10mA 100 MHz

2410121242_CBI-MMBT5401_C2828453.pdf

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