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quality CBI DTC114EUA Digital Transistor Featuring Built in Bias Resistors for Simplified Circuit Integration factory
quality CBI DTC114EUA Digital Transistor Featuring Built in Bias Resistors for Simplified Circuit Integration factory

CBI DTC114EUA Digital Transistor Featuring Built in Bias Resistors for Simplified Circuit Integration

Key Attributes
Model Number: DTC114EUA
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
10kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC114EUA
Package:
SOT-323
Product Description

Product Overview

Digital Transistors with built-in resistors simplify circuit design by eliminating the need for external input resistors, enabling easy configuration of inverter circuits. These NPN transistors feature thin-film bias resistors with complete isolation for negative input biasing and minimal parasitic effects, making them ideal for applications where on/off conditions are the primary design consideration. Available in various package types including SOT-523, SOT-323, SOT-23-3L, and SOT-23.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: Digital Transistor (NPN)
  • Built-in Components: Bias resistors

Technical Specifications

Model Package Pin Connections Marking
DTC114EE SOT-523 1. IN, 2. GND, 3. OUT 24
DTC114EUA SOT-323 1. IN, 2. GND, 3. OUT 24
DTC114EKA SOT-23-3L 1. IN, 2. GND, 3. OUT 24
DTC114ECA SOT-23 1. IN, 2. GND, 3. OUT 24
Symbol Parameter Conditions Min Typ Max Unit
Maximum Ratings VCC Supply Voltage (Ta=25 unless otherwise noted) 50 V
VIN Input Voltage -10 +40 V
IO Output Current 50 mA
ICM Peak Collector Current 100 mA
PD Power Dissipation 200 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55 +150
Electrical Characteristics VI(off) Input voltage VCC=5V, IO=100A 0 0.5 V
VI(on) Input voltage VO=0.3V, IO=10mA 3 V
VO(on) Output voltage IO/II=10mA/0.5mA 0.3 V
II Input current VI=5V 0.88 mA
IO(off) Output current VCC=50V, VI=0 0.5 A
GI DC current gain VO=5V, IO=5mA 30
R1 Input resistance 7 10 13 k
R2/R1 Resistance ratio 0.8 1 1.2
fT Transition frequency VO=10V, IO=5mA,f=100MHz 250 MHz
Package Type Symbol Dimension (mm) Min Dimension (mm) Max
SOT-523 A 0.60 0.80
A1 0.010 0.100
B 0.95 1.05
bp 0.26 0.40
bq 0.16 0.30
C 0.09 0.15
D 1.50 1.70
E 0.70 0.85
HE 1.45 1.75
Lp 0.16 0.36
SOT-323 A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
0 6
SOT-23-3L A 1.05 1.20
A1 0.010 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.15
D 2.80 3.00
E 1.50 1.70
HE 2.60 3.00
Lp 0.25 0.55
2 6
SOT-23 A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
0 5

2410121650_CBI-DTC114EUA_C21714092.pdf

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