Low leakage switching diode in plastic SMD package CBI BAS116 suitable for surface mounted circuits
Product Overview
This silicon epitaxial planar diode is a low leakage switching diode designed for surface mounted circuits. Its key feature is its exceptionally low leakage current, making it suitable for applications requiring minimal current flow when reverse biased. The diode comes in a plastic SMD package.
Product Attributes
- Package Type: Plastic SMD (SOT-23)
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Marking Code: JV
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 85 | V | |
| Continuous Reverse Voltage | VR | 75 | V | |
| Continuous Forward Current | IF | 215 | mA | |
| Repetitive Peak Forward Current | IFRM | 500 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 4 | A | t = 1 s |
| 1 | A | t = 1 ms | ||
| 0.5 | A | t = 1 s | ||
| Power Dissipation | Ptot | 250 | mW | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -65 to +150 | C | |
| Forward Voltage | VF | - | V | at IF = 1 mA |
| - | V | at IF = 10 mA | ||
| 0.9 | V | at IF = 50 mA | ||
| 1 | V | at IF = 150 mA | ||
| Reverse Current | IR | - | nA | at VR = 75 V |
| 5 | nA | at VR = 75 V, Tj = 150 C | ||
| Diode Capacitance | Cd | 2 | pF | at VR = 0, f = 1 MHz |
| Reverse Recovery Time | trr | 3 | s | at IF = 10 mA, IR = 10 mA, RL = 100 , irr = 0.1 IR |
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | 0.90 | 1.10 | |
| A1 | 0.013 | 0.100 | |
| B | 1.80 | 2.00 | |
| bp | 0.35 | 0.50 | |
| C | 0.09 | 0.150 | |
| D | 2.80 | 3.00 | |
| E | 1.20 | 1.40 | |
| HE | 2.20 | 2.80 | |
| Lp | 0.20 | 0.50 | |
| 0 | 5 |
2410121313_CBI-BAS116_C21714135.pdf
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