Low leakage switching diode in plastic SMD package CBI BAS116 suitable for surface mounted circuits

Key Attributes
Model Number: BAS116
Product Custom Attributes
Reverse Leakage Current (Ir):
5nA
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Recovery Time (trr):
3us
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
215mA
Mfr. Part #:
BAS116
Package:
SOT-23
Product Description

Product Overview

This silicon epitaxial planar diode is a low leakage switching diode designed for surface mounted circuits. Its key feature is its exceptionally low leakage current, making it suitable for applications requiring minimal current flow when reverse biased. The diode comes in a plastic SMD package.

Product Attributes

  • Package Type: Plastic SMD (SOT-23)
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.
  • Marking Code: JV

Technical Specifications

Parameter Symbol Value Unit Notes
Repetitive Peak Reverse Voltage VRRM 85 V
Continuous Reverse Voltage VR 75 V
Continuous Forward Current IF 215 mA
Repetitive Peak Forward Current IFRM 500 mA
Non-Repetitive Peak Forward Surge Current IFSM 4 A t = 1 s
1 A t = 1 ms
0.5 A t = 1 s
Power Dissipation Ptot 250 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -65 to +150 C
Forward Voltage VF - V at IF = 1 mA
- V at IF = 10 mA
0.9 V at IF = 50 mA
1 V at IF = 150 mA
Reverse Current IR - nA at VR = 75 V
5 nA at VR = 75 V, Tj = 150 C
Diode Capacitance Cd 2 pF at VR = 0, f = 1 MHz
Reverse Recovery Time trr 3 s at IF = 10 mA, IR = 10 mA, RL = 100 , irr = 0.1 IR
Symbol Dimension in Millimeters Min Max
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
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2410121313_CBI-BAS116_C21714135.pdf

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