Integrated Dual Bias Resistor Transistors CBI MMUN5232DW in Compact SOT363 Package for Surface Mount

Name: Integrated Dual Bias Resistor Transistors CBI MMUN5232DW in Compact SOT363 Package for Surface Mount
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MMUN5232DW
Availability: InStock

Key Attributes

Model Number: MMUN5232DW

Product Custom Attributes

Output Voltage(VO(on)):

200mV

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

MMUN5232DW

Package:

SOT-363

Product Description

Product Overview

The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and their external bias networks. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power surface mount applications where space is critical. The MMUN5211DW series houses two BRT devices within a compact SOT-363 package. The product material complies with RoHS requirements.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Origin: China
Material Compliance: RoHS
Package Type: SOT-363

Technical Specifications

Model	Marking	R1 (K)	R2 (K)	Shipping	DC Current Gain (hFE) Min.	Collector Base Cutoff Current (ICBO) Max.	Collector Emitter Cutoff Current (ICEO) Max.	Emitter Base Cutoff Current (IEBO) Max.	Collector Base Breakdown Voltage (V(BR)CBO) Min.	Collector Emitter Breakdown Voltage (V(BR)CEO) Min.	VCEsat (V) Typ.	Output Voltage (on) (VOL) Max.	Output Voltage (off) (VOH) Min.	R1 (K) Input Resistor	R1/R2 Resistor Ratio
MMUN5211DW	7A	10	10	3000/Tape&Reel	35	100 nA	500 nA	0.5 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V	7	0.8
MMUN5212DW	7B	22	22	3000/Tape&Reel	60	100 nA	500 nA	0.2 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V	15.4	0.8
MMUN5213DW	7C	47	47	3000/Tape&Reel	80	100 nA	500 nA	0.1 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V (VCC=5V, VB=3.5V, RL=1K)	32.9	0.8
MMUN5214DW	7D	10	47	3000/Tape&Reel	80	100 nA	500 nA	0.2 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V	7	0.17
MMUN5215DW	7E	10		3000/Tape&Reel	160	100 nA	500 nA	0.9 mA	50 V	50 V	0.25 V (IC=10mA, IB=1mA)	0.2 V	4.9 V	7	-
MMUN5216DW	7F	4.7		3000/Tape&Reel	160	100 nA	500 nA	1.9 mA	50 V	50 V	0.25 V (IC=10mA, IB=1mA)	0.2 V	4.9 V	3.3	-
MMUN5230DW	7G	1	1	3000/Tape&Reel	3	100 nA	500 nA	4.3 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V (VCC=5V, VB=0.25V, RL=1K)	0.7	0.8
MMUN5231DW	7H	2.2	2.2	3000/Tape&Reel	8	100 nA	500 nA	2.3 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V	1.5	0.055
MMUN5232DW	7J	4.7	4.7	3000/Tape&Reel	15	100 nA	500 nA	1.5 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V	3.3	0.38
MMUN5233DW	7K	4.7	47	3000/Tape&Reel	80	100 nA	500 nA	0.18 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V	3.3	0.055
MMUN5234DW	7L	22	47	3000/Tape&Reel	80	100 nA	500 nA	0.13 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V	15.4	0.38
MMUN5235DW	7M	2.2	47	3000/Tape&Reel	80	100 nA	500 nA	0.2 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V	1.54	0.038
MMUN5238DW	7Q	2.2	-	3000/Tape&Reel	160	100 nA	500 nA	4 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	4.9 V	1.54	-
MMUN5241DW	7T	100	-	3000/Tape&Reel	160	100 nA	500 nA	0.1 mA	50 V	50 V	0.25 V (IC=10mA, IB=0.3mA)	0.2 V	0.2 V (VCC=5V, VB=5V, RL=1K)	70	-

Maximum Ratings (T_A = 25C unless otherwise noted, common for Q₁ and Q₂)

Rating	Symbol	Value	Unit
Collector-Base Voltage	V_CBO	50	Vdc
Collector-Emitter Voltage	V_CEO	50	Vdc
Collector Current	I_C	100	mAdc

Thermal Characteristics

(One Junction Heated)

Characteristic	Symbol	Max Unit
Total Device Dissipation (T_A= 25C)	P_D	187 (Note 1.) mW
Derate above 25C	-	1.5 (Note 1.) mW/C
Thermal Resistance Junction-to-Ambient	R_JA	670 (Note 1.) C/W

(Both Junctions Heated)

Characteristic	Symbol	Max Unit
Total Device Dissipation (T_A= 25C)	P_D	250 (Note 1.) mW
Derate above 25C	-	2.0 (Note 1.) mW/C
Thermal Resistance Junction-to-Ambient	R_JA	493 (Note 1.) C/W
Thermal Resistance Junction-to-Lead	R_JL	188 (Note 1.) C/W

Characteristic	Symbol	Max Unit
Junction and Storage Temperature	T_J, T_stg	55 to +150 C

Notes:
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad

2410121707_CBI-MMUN5232DW_C21714285.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.

Integrated Dual Bias Resistor Transistors CBI MMUN5232DW in Compact SOT363 Package for Surface Mount