Switching PNP Silicon Epitaxial Planar Transistor CBI DTA114EE Featuring Built-in Bias Resistors
Key Attributes
Model Number:
DTA114EE
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA114EE
Package:
SOT-523
Product Description
Product Overview
The MMDTA114EE is a PNP Silicon Epitaxial Planar Transistor designed for switching and interface circuit applications, as well as drive circuits. Its key advantage lies in the integration of built-in bias resistors, which simplify circuit design and reduce the overall quantity of parts and manufacturing process steps.
Product Attributes
- Brand: MMDTA (implied by model number)
- Type: PNP Silicon Epitaxial Planar Transistor
- Features: Built-in bias resistors
Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25) | |||
| Collector Emitter Voltage | VCEO | -50 | V |
| Input Voltage | VI | +10 to -40 | V |
| Collector Current | IC | -100 | mA |
| Power Dissipation | Ptot | 150 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55 to +150 | |
| Characteristics at Ta = 25 | |||
| DC Current Gain at VCE = -5V, IC = -5mA | hFE | 30 | - |
| Collector Base Cutoff Current at VCB = -50V | ICBO | -500 | nA |
| Emitter Base Cutoff Current at VEB = -5V | IEBO | -0.88 | mA |
| Collector Emitter Saturation Voltage at IC = -10mA, IB = -0.5mA | VCE(sat) | -0.3 | V |
| Input on Voltage at VCE = -0.3V, IC = -10mA | VI(on) | -3 | V |
| Input off Voltage at VCE = -5V, IC = -100uA | VI(off) | -0.5 | V |
| Transition frequency at VCE = -10V, IE = -5mA, f = 100MHz | fT | 250 | MHz |
| Input Resistance R1 | R1 | 7 to 13 | K |
| Resistance Ratio R2 / R1 | R2 / R1 | 0.8 to 1.2 | - |
| Input Resistance R2 + 1 | R2 + 1 | 20 to 22 | K |
2410121313_CBI-DTA114EE_C2828439.pdf
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