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quality switching diode CBI 1N4148WT silicon epitaxial planar ultra small surface mount for electronic circuit factory
quality switching diode CBI 1N4148WT silicon epitaxial planar ultra small surface mount for electronic circuit factory

switching diode CBI 1N4148WT silicon epitaxial planar ultra small surface mount for electronic circuit

Key Attributes
Model Number: 1N4148WT
Product Custom Attributes
Reverse Leakage Current (Ir):
50uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
125mA
Mfr. Part #:
1N4148WT
Package:
SOD-523
Product Description

Product Overview

The 1N4148WT is a silicon epitaxial planar switching diode designed for general-purpose switching applications. It features ultra-small surface mount packaging and fast switching speed, making it suitable for various electronic circuits requiring efficient signal handling.

Product Attributes

  • Type: Silicon Epitaxial Planar Switching Diode
  • Package: Ultra-small surface mount (SOD-523)
  • Marking Code: T4

Technical Specifications

Parameter Symbol Min. Max. Unit Notes
Reverse Breakdown Voltage at IR = 1 A V(BR)R 75 - V
Forward Voltage at IF = 1 mA VF - 0.715 V
Forward Voltage at IF = 10 mA VF - 0.855 V
Forward Voltage at IF = 50 mA VF - 1 V
Forward Voltage at IF = 150 mA VF - 1.25 V
Peak Reverse Current at VR = 75 V IR - 1 A
Peak Reverse Current at VR = 20 V IR - 25 nA
Peak Reverse Current at VR = 75 V, TJ = 150 OC IR - 50 A
Peak Reverse Current at VR = 25 V, TJ = 150 OC IR - 30 A
Total Capacitance at VR = 0 V, f = 1 MHz C - 2 pF
Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 trr - 4 ns
Non-Repetitive Peak Reverse Voltage VRM - 100 V
Reverse Voltage VR - 75 V
Average Rectified Forward Current IF(AV) - 125 mA
Forward Continuous Current IFM - 250 mA
Non-repetitive Peak Forward Surge Current at t = 1 s IFSM - 2 A
Non-repetitive Peak Forward Surge Current at t = 100 ms IFSM - 1 A
Power Dissipation Ptot - 150 mW
Thermal Resistance Junction to Ambient Air RJA - 833 OC/W
Operating Temperature Range Tj -65 +150 OC
Storage Temperature Range Tstg -65 +150 OC
Package Outline Dimensions (mm)
A 0.70 - 0.60
b 0.4 - 0.3
p 0.135 - 0.100
C 1.25 - 1.15
D 0.85 - 0.75
E 1.7 - 1.5
H 0.1

2410121257_CBI-1N4148WT_C2828426.pdf

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