Silicon Epitaxial Planar Diode Fast Switching Type CBI 1N4448WS SOD 323 Package PIN Diode
Key Attributes
Model Number:
1N4448WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
100nA@80V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
80V
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
1N4448WS
Package:
SOD-323
Product Description
Product Overview
This is a Silicon Epitaxial Planar Switching Diode, designed for fast switching applications. It is a PIN diode with a simplified outline in a SOD-323 package.
Product Attributes
- Type: Fast Switching Diode
- Construction: Silicon Epitaxial Planar
- Package: SOD-323
- Pinning: Cathode (1), Anode (2)
- Marking Code: " "
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Absolute Maximum Ratings (Ta = 25 C) | Value | Unit | |
|---|---|---|---|
| Peak Reverse Voltage | 100 | V | |
| Reverse Voltage | 80 | V | |
| Average Rectified Forward Current | 150 | mA | |
| Forward Continuous Current | 300 | mA | |
| Non-Repetitive Peak Forward Surge Current (at t = 1 s) | 0.5 | A | |
| Power Dissipation | 200 | mW | |
| Junction Temperature | 150 | C | |
| Storage Temperature Range | -65 to +150 | C | |
| Characteristics (at Ta = 25 C) | Symbol | Min. | Max. | Unit | |
|---|---|---|---|---|---|
| Forward Voltage at IF = 5 mA | at IF = 5 mA | VF | 0.62 | - | V |
| at IF = 10 mA | VF | - | 0.72 | V | |
| at IF = 100 mA | VF | - | 0.855 | V | |
| at IF = 150 mA | VF | - | 1 | V | |
| Reverse Leakage Current | at VR = 80 V | IR | - | 1.25 | V |
| at VR = 20 V | IR | - | 100 | nA | |
| at VR = 75 V, TJ = 150 C | IR | - | 25 | nA | |
| at VR = 25 V, TJ = 150 C | IR | - | 50 | A | |
| Reverse Breakdown Voltage at IR = 100 A | V(BR)R | 80 | - | V | |
| Total Capacitance at VR = 0.5 V, f = 1 MHz | Ctot | - | 4 | pF | |
| Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 | trr | - | 4 | ns | |
2410121502_CBI-1N4448WS_C2919743.pdf
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