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quality Silicon Epitaxial Planar Switching Diode CBI MMBD7000 with Fast Switching Speed and High Conductance factory
quality Silicon Epitaxial Planar Switching Diode CBI MMBD7000 with Fast Switching Speed and High Conductance factory

Silicon Epitaxial Planar Switching Diode CBI MMBD7000 with Fast Switching Speed and High Conductance

Key Attributes
Model Number: MMBD7000
Product Custom Attributes
Reverse Leakage Current (Ir):
3uA@100V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Series Connection
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
MMBD7000
Package:
SOT-23
Product Description

Product Overview

This is a Silicon Epitaxial Planar Switching Diode designed for general-purpose switching applications. It offers fast switching speed and high conductance, making it suitable for various electronic circuits requiring efficient signal handling.

Product Attributes

  • Marking Code: A7
  • Package: SOT-23 Plastic Package
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings
Repetitive Peak Reverse Voltage VRRM 100 V (Ta = 25 OC)
Reverse Voltage VR 100 V (Ta = 25 OC)
Forward Current IF 200 mA (Ta = 25 OC)
Non-repetitive Peak Forward Surge Current IFSM 1 A (t = 1 s, Ta = 25 OC)
Non-repetitive Peak Forward Surge Current IFSM 2 A (t = 1 s, Ta = 25 OC)
Power Dissipation Pd 350 mW (Ta = 25 OC)
Junction and Storage Temperature Range Tj, Tstg -65 to +150 OC
Characteristics
Reverse Breakdown Voltage V(BR)R 100 V at IR = 100 A, (Ta = 25 OC)
Forward Voltage VF 0.55 V at IF = 1 mA, (Ta = 25 OC)
Forward Voltage VF 0.67 V at IF = 10 mA, (Ta = 25 OC)
Forward Voltage VF 0.75 V at IF = 100 mA, (Ta = 25 OC)
Forward Voltage VF 0.82 V at IF = 150 mA, (Ta = 25 OC)
Forward Voltage VF 1.25 V at IF = 150 mA, (Ta = 25 OC)
Reverse Current IR 1 A at VR = 50 V, (Ta = 25 OC)
Reverse Current IR 3 A at VR = 100 V, (Ta = 25 OC)
Reverse Current IR 100 A at VR = 50 V, Tj = 125 OC
Total Capacitance CT 2 pF at VR = 0 V, f = 1 MHz, (Ta = 25 OC)
Reverse Recovery Time trr 4 ns at IF = IR = 10 mA, Irr = 0.1 X IR, RL = 100 , (Ta = 25 OC)

2410121306_CBI-MMBD7000_C2928241.pdf

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