Surface Mount Schottky Barrier Diode CBI 1N5819WS with 40 Volt Reverse Voltage and 1 Amp Current
Product Overview
The 1N5817WS, 1N5818WS, and 1N5819WS series are 1A surface mount Schottky barrier diodes. These diodes are designed for applications requiring efficient rectification and low forward voltage drop. They are suitable for general-purpose rectification, power supply circuits, and switching applications.
Product Attributes
- Type: Schottky Barrier Diode
- Mounting Type: Surface Mount
- Package: SOD-323
Technical Specifications
| Parameter | Symbol | 1N5817WS | 1N5818WS | 1N5819WS | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||
| Reverse Voltage | VR | 20 | 30 | 40 | V |
| Average Forward Rectified Current | IF(AV) | 1 | A | ||
| Non-Repetitive Peak Forward Surge Current (t = 8.3 ms) | IFSM | 9 | A | ||
| Power Dissipation | Ptot | 450 | mW | ||
| Operating Temperature Range | Tj | -55 to +125 | C | ||
| Storage Temperature Range | Tstg | -55 to +125 | C | ||
| Characteristics at Ta = 25 C | |||||
| Reverse Breakdown Voltage at IR = 1 mA | V(BR)R | 20 | 30 | 40 | V |
| Forward Voltage at IF = 1 A | VF | - | - | - | V |
| 0.45 | 0.55 | 0.6 | |||
| Forward Voltage at IF = 3 A | VF | - | - | - | V |
| 0.75 | 0.875 | 0.9 | |||
| Reverse Voltage Leakage Current at VR = 20 V | IR | 1 | - | - | mA |
| Reverse Voltage Leakage Current at VR = 30 V | IR | - | 1 | - | mA |
| Reverse Voltage Leakage Current at VR = 40 V | IR | - | - | 1 | mA |
| Total Capacitance at VR = 4 V, f = 1 MHz | Ctot | 120 | pF | ||
| Marking Code | |||||
| 1N5817WS | SJ | ||||
| 1N5818WS / 5819WS | SL | ||||
2410121234_CBI-1N5819WS_C2828425.pdf
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