Surface Mount Schottky Barrier Diode CBI 1N5819WS with 40 Volt Reverse Voltage and 1 Amp Current

Key Attributes
Model Number: 1N5819WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
1mA@40V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
900mV@3A
Current - Rectified:
1A
Mfr. Part #:
1N5819WS
Package:
SOD-323
Product Description

Product Overview

The 1N5817WS, 1N5818WS, and 1N5819WS series are 1A surface mount Schottky barrier diodes. These diodes are designed for applications requiring efficient rectification and low forward voltage drop. They are suitable for general-purpose rectification, power supply circuits, and switching applications.

Product Attributes

  • Type: Schottky Barrier Diode
  • Mounting Type: Surface Mount
  • Package: SOD-323

Technical Specifications

Parameter Symbol 1N5817WS 1N5818WS 1N5819WS Unit
Absolute Maximum Ratings (Ta = 25 C)
Reverse Voltage VR 20 30 40 V
Average Forward Rectified Current IF(AV) 1 A
Non-Repetitive Peak Forward Surge Current (t = 8.3 ms) IFSM 9 A
Power Dissipation Ptot 450 mW
Operating Temperature Range Tj -55 to +125 C
Storage Temperature Range Tstg -55 to +125 C
Characteristics at Ta = 25 C
Reverse Breakdown Voltage at IR = 1 mA V(BR)R 20 30 40 V
Forward Voltage at IF = 1 A VF - - - V
0.45 0.55 0.6
Forward Voltage at IF = 3 A VF - - - V
0.75 0.875 0.9
Reverse Voltage Leakage Current at VR = 20 V IR 1 - - mA
Reverse Voltage Leakage Current at VR = 30 V IR - 1 - mA
Reverse Voltage Leakage Current at VR = 40 V IR - - 1 mA
Total Capacitance at VR = 4 V, f = 1 MHz Ctot 120 pF
Marking Code
1N5817WS SJ
1N5818WS / 5819WS SL

2410121234_CBI-1N5819WS_C2828425.pdf

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