Silicon band switching diode CBI BA892WT designed for vhf television tuner surface mount circuits
Key Attributes
Model Number:
BA892WT
Product Custom Attributes
Reverse Leakage Current (Ir):
20nA
Voltage - DC Reverse (Vr) (Max):
35V
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
100mA
Mfr. Part #:
BA892WT
Package:
SOD-523
Product Description
Product Overview
The BA892WT is a silicon band switching diode designed for applications in VHF television tuners and surface mount band switching circuits. It offers reliable performance with clearly defined electrical characteristics.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Model: BA892WT
- Type: Silicon Band Switching Diode
- Package: Plastic surface mounted package; 2 leads SOD-523
- Marking Code: "U"
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||
| Reverse Voltage | VR | - | - | 35 | V |
| Forward Current | IF | - | - | 100 | mA |
| Junction Temperature | TJ | - | - | 150 | C |
| Operating Temperature Range | Top | -55 | - | 125 | C |
| Storage Temperature Range | Tstg | -55 | - | 150 | C |
| Characteristics at Ta = 25 C | |||||
| Reverse Current at VR = 20 V | IR | - | - | 20 | nA |
| Forward Voltage at IF = 100 mA | VF | - | - | 1 | V |
| Diode Capacitance at VR = 1 V, f = 1 MHz | CT | 0.65 | - | - | pF |
| Diode Capacitance at VR = 3 V, f = 1 MHz | CT | - | 0.6 | - | pF |
| Diode Capacitance at VR = 0 V, f = 100 MHz | CT | - | 1 | 1.4 | pF |
| Forward Resistance at IF = 3 mA, f = 100 MHz | rf | - | 1.1 | - | |
| Forward Resistance at IF = 10 mA, f = 100 MHz | rf | - | 0.7 | 0.5 | |
| Series Inductance | Ls | - | 0.6 | - | nH |
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | 0.60 | 0.70 | |
| A1 | 0 | 0.05 | |
| B | 0.75 | 0.85 | |
| bp | 0.25 | 0.40 | |
| C | 0.09 | 0.15 | |
| E | 1.15 | 1.25 | |
| HE | 1.50 | 1.70 |
2410121550_CBI-BA892WT_C5362078.pdf
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