Compact SOT23 packaged diode CBI BAV23SE designed for high voltage switching electronic applications

Key Attributes
Model Number: BAV23SE
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
250V
Diode Configuration:
1 Pair Series Connection
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
400mA
Mfr. Part #:
BAV23SE
Package:
SOT-23
Product Description

Product Overview

The BAV23 series are high-voltage switching diodes designed for various electronic applications. These silicon epitaxial planar diodes are housed in a SOT-23 plastic package, offering reliable performance for demanding switching tasks.

Product Attributes

  • Product Family: BAV23
  • Package Type: SOT-23 Plastic Package
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Model Marking Code Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit
BAV23 HC Maximum Repetitive Reverse Voltage VRRM 250 V
Reverse Voltage VR 200 V
Forward Current IF(AV) 400 mA
Repetitive Peak Forward Current IFRM 625 mA
Non-repetitive Peak Forward Surge Current (t = 10 ms) IFSM 1.7 A
Non-repetitive Peak Forward Surge Current (t = 100 s)
Non-repetitive Peak Forward Surge Current (t = 1 s)
Power Dissipation Ptot 350 mW
Thermal Resistance Junction to Ambient Air RJA 357 C/W
Operating Junction and Storage Temperature Range Tj, Tstg -65 to +150 C
Reverse Breakdown Voltage at IR = 100 A V(BR)R 250 V
Total Capacitance at VR = 0 V, f = 1 MHz Ctot 5 pF
BAV23SE PY Maximum Repetitive Reverse Voltage VRRM 250 V
Reverse Voltage VR 200 V
Forward Current IF(AV) 400 mA
Repetitive Peak Forward Current IFRM 625 mA
Non-repetitive Peak Forward Surge Current (t = 10 ms) IFSM 1.7 A
Non-repetitive Peak Forward Surge Current (t = 100 s)
Non-repetitive Peak Forward Surge Current (t = 1 s)
Power Dissipation Ptot 350 mW
Thermal Resistance Junction to Ambient Air RJA 357 C/W
Operating Junction and Storage Temperature Range Tj, Tstg -65 to +150 C
Reverse Breakdown Voltage at IR = 100 A V(BR)R 250 V
Total Capacitance at VR = 0 V, f = 1 MHz Ctot 5 pF
BAV23CC PZ Maximum Repetitive Reverse Voltage VRRM 250 V
Reverse Voltage VR 200 V
Forward Current IF(AV) 400 mA
Repetitive Peak Forward Current IFRM 625 mA
Non-repetitive Peak Forward Surge Current (t = 10 ms) IFSM 1.7 A
Non-repetitive Peak Forward Surge Current (t = 100 s)
Non-repetitive Peak Forward Surge Current (t = 1 s)
Power Dissipation Ptot 350 mW
Thermal Resistance Junction to Ambient Air RJA 357 C/W
Operating Junction and Storage Temperature Range Tj, Tstg -65 to +150 C
Reverse Breakdown Voltage at IR = 100 A V(BR)R 250 V
Total Capacitance at VR = 0 V, f = 1 MHz Ctot 5 pF
BAV23CA RA Maximum Repetitive Reverse Voltage VRRM 250 V
Reverse Voltage VR 200 V
Forward Current IF(AV) 400 mA
Repetitive Peak Forward Current IFRM 625 mA
Non-repetitive Peak Forward Surge Current (t = 10 ms) IFSM 1.7 A
Non-repetitive Peak Forward Surge Current (t = 100 s)
Non-repetitive Peak Forward Surge Current (t = 1 s)
Power Dissipation Ptot 350 mW
Thermal Resistance Junction to Ambient Air RJA 357 C/W
Operating Junction and Storage Temperature Range Tj, Tstg -65 to +150 C
Reverse Breakdown Voltage at IR = 100 A V(BR)R 250 V
Total Capacitance at VR = 0 V, f = 1 MHz Ctot 5 pF
Characteristics at Ta = 25 C Symbol Min. Max. Unit
Forward Voltage at IF = 100 mA VF - 1 V
Forward Voltage at IF = 200 mA VF - 1.25 V
Reverse Current at VR = 200 V, Tj = 25 C IR - 100 nA
Reverse Current at VR = 200 V, Tj = 150 C IR - 100 A
Reverse Recovery Time at IF = IR = 30 mA, Irr = 0.1 X IR, RL = 100 trr - 50 ns

2410121321_CBI-BAV23SE_C2919771.pdf

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