Silicon Epitaxial Planar Transistor CBI MMUN2214 NPN Type with Base Emitter Resistors in Compact SOT23 Package
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for switching and interface circuit applications, as well as drive circuit applications. It features integrated resistors for base and emitter, making it suitable for various electronic designs. Available in a SOT-23 plastic package, these transistors offer reliable performance in a compact form factor.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material: Silicon Epitaxial Planar
- Package Type: SOT-23 Plastic Package
Technical Specifications
| Model | R1 (Input) (K) | R2 (K) | Marking | DC Current Gain (hFE) (VCE=10V, IC=5mA) Min. | DC Current Gain (hFE) (VCE=10V, IC=5mA) Max. | Collector Base Cutoff Current (ICBO) (VCB=50V) | Collector Emitter Cutoff Current (ICEO) (VCE=50V) | Emitter Base Cutoff Current (IEBO) (VEB=6V) (mA) | Collector Base Breakdown Voltage (V(BR)CBO) (IC=10A) | Collector Emitter Breakdown Voltage (V(BR)CEO) (IC=2mA) | Collector Emitter Saturation Voltage (VCEsat) (IC=10mA, IB=0.3mA) | Collector Emitter Saturation Voltage (VCEsat) (IC=10mA, IB=5mA) | Collector Emitter Saturation Voltage (VCEsat) (IC=10mA, IB=1mA) | Output Voltage (on) (VOL) (VCC=5V, RL=1K) | Output Voltage (off) (VOH) (VCC=5V, RL=1K) | Input Resistor (R1) (K) | Resistor Ratio (R1/R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMUN2211 | 10 | 10 | A8B | 35 | - | -100 nA | -500 nA | 0.5 | 50 V | 50 V | - | - | - | 0.2 V | 4.9 V | 7 | 0.8 |
| MMUN2212 | 22 | 22 | A8A | 60 | - | -100 nA | -500 nA | 0.2 | 50 V | 50 V | - | - | - | 0.2 V | 4.9 V | 15.4 | 0.17 |
| MMUN2213 | 47 | 47 | A8C | 80 | - | -100 nA | -500 nA | 0.1 | 50 V | 50 V | - | - | - | 0.2 V | - | 32.9 | - |
| MMUN2214 | 10 | 47 | A8D | 80 | - | -100 nA | -500 nA | 0.2 | 50 V | 50 V | - | - | - | 0.2 V | 4.9 V | 7 | 0.17 |
| MMUN2215 | 10 | A8E | 160 | - | -100 nA | -500 nA | 0.9 | 50 V | 50 V | 0.25 V | - | - | 0.2 V | 4.9 V | 7 | - | |
| MMUN2216 | 4.7 | A8F | 160 | - | -100 nA | -500 nA | 1.9 | 50 V | 50 V | 0.25 V | - | - | 0.2 V | 4.9 V | 3.3 | - | |
| MMUN2230 | 1 | 1 | A8G | 3 | - | -100 nA | -500 nA | 4.3 | 50 V | 50 V | 0.25 V | - | - | 0.2 V | 4.9 V | 0.7 | 0.8 |
| MMUN2231 | 2.2 | 2.2 | A8H | 8 | - | -100 nA | -500 nA | 2.3 | 50 V | 50 V | 0.25 V | - | - | 0.2 V | 4.9 V | 1.5 | 1.2 |
| MMUN2232 | 4.7 | 4.7 | A8J | 15 | - | -100 nA | -500 nA | 1.5 | 50 V | 50 V | 0.25 V | - | - | 0.2 V | 4.9 V | 3.3 | 1.2 |
| MMUN2233 | 4.7 | 47 | A8K | 80 | - | -100 nA | -500 nA | 0.18 | 50 V | 50 V | 0.25 V | - | - | 0.2 V | 4.9 V | 3.3 | 0.055 |
| MMUN2234 | 22 | 47 | A8L | 80 | - | -100 nA | -500 nA | 0.13 | 50 V | 50 V | 0.25 V | - | - | 0.2 V | 4.9 V | 15.4 | 0.38 |
| MMUN2235 | 2.2 | 47 | A8M | 80 | - | -100 nA | -500 nA | 0.2 | 50 V | 50 V | 0.25 V | - | - | 0.2 V | 4.9 V | 1.54 | 0.038 |
| MMUN2238 | 2.2 | A8R | 160 | - | -100 nA | -500 nA | 4 | 50 V | 50 V | 0.25 V | - | - | 0.2 V | 4.9 V | 1.54 | - | |
| MMUN2241 | 100 | A8U | 160 | - | -100 nA | -500 nA | 0.1 | 50 V | 50 V | - | 0.25 V | - | 0.2 V | - | 70 | - |
| Absolute Maximum Ratings (Ta = 25 C) | Symbol | Value | Unit |
|---|---|---|---|
| Collector Base Voltage | VCBO | 50 | V |
| Collector Emitter Voltage | VCEO | 50 | V |
| Collector Current | IC | 100 | mA |
| Total Power Dissipation | Ptot | 200 | mW |
| Junction Temperature | Tj | 150 | C |
| Storage Temperature Range | TS | -55 to +150 | C |
Package Outline
Package: SOT-23 Plastic Surface Mounted Package; 3 leads
| Symbol | Dimension (mm) Min | Dimension (mm) Max |
|---|---|---|
| A | 0.90 | 1.10 |
| A1 | 0.013 | 0.100 |
| B | 1.80 | 2.00 |
| bp | 0.35 | 0.50 |
| C | 0.09 | 0.150 |
| D | 2.80 | 3.00 |
| E | 1.20 | 1.40 |
| HE | 2.20 | 2.80 |
| Lp | 0.20 | 0.50 |
| 0 | 5 |
2410121447_CBI-MMUN2214_C21714132.pdf
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