Silicon Epitaxial Planar Transistor CBI MMUN2214 NPN Type with Base Emitter Resistors in Compact SOT23 Package

Key Attributes
Model Number: MMUN2214
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN2214
Package:
SOT-23
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching and interface circuit applications, as well as drive circuit applications. It features integrated resistors for base and emitter, making it suitable for various electronic designs. Available in a SOT-23 plastic package, these transistors offer reliable performance in a compact form factor.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Epitaxial Planar
  • Package Type: SOT-23 Plastic Package

Technical Specifications

Model R1 (Input) (K) R2 (K) Marking DC Current Gain (hFE) (VCE=10V, IC=5mA) Min. DC Current Gain (hFE) (VCE=10V, IC=5mA) Max. Collector Base Cutoff Current (ICBO) (VCB=50V) Collector Emitter Cutoff Current (ICEO) (VCE=50V) Emitter Base Cutoff Current (IEBO) (VEB=6V) (mA) Collector Base Breakdown Voltage (V(BR)CBO) (IC=10A) Collector Emitter Breakdown Voltage (V(BR)CEO) (IC=2mA) Collector Emitter Saturation Voltage (VCEsat) (IC=10mA, IB=0.3mA) Collector Emitter Saturation Voltage (VCEsat) (IC=10mA, IB=5mA) Collector Emitter Saturation Voltage (VCEsat) (IC=10mA, IB=1mA) Output Voltage (on) (VOL) (VCC=5V, RL=1K) Output Voltage (off) (VOH) (VCC=5V, RL=1K) Input Resistor (R1) (K) Resistor Ratio (R1/R2)
MMUN2211 10 10 A8B 35 - -100 nA -500 nA 0.5 50 V 50 V - - - 0.2 V 4.9 V 7 0.8
MMUN2212 22 22 A8A 60 - -100 nA -500 nA 0.2 50 V 50 V - - - 0.2 V 4.9 V 15.4 0.17
MMUN2213 47 47 A8C 80 - -100 nA -500 nA 0.1 50 V 50 V - - - 0.2 V - 32.9 -
MMUN2214 10 47 A8D 80 - -100 nA -500 nA 0.2 50 V 50 V - - - 0.2 V 4.9 V 7 0.17
MMUN2215 10 A8E 160 - -100 nA -500 nA 0.9 50 V 50 V 0.25 V - - 0.2 V 4.9 V 7 -
MMUN2216 4.7 A8F 160 - -100 nA -500 nA 1.9 50 V 50 V 0.25 V - - 0.2 V 4.9 V 3.3 -
MMUN2230 1 1 A8G 3 - -100 nA -500 nA 4.3 50 V 50 V 0.25 V - - 0.2 V 4.9 V 0.7 0.8
MMUN2231 2.2 2.2 A8H 8 - -100 nA -500 nA 2.3 50 V 50 V 0.25 V - - 0.2 V 4.9 V 1.5 1.2
MMUN2232 4.7 4.7 A8J 15 - -100 nA -500 nA 1.5 50 V 50 V 0.25 V - - 0.2 V 4.9 V 3.3 1.2
MMUN2233 4.7 47 A8K 80 - -100 nA -500 nA 0.18 50 V 50 V 0.25 V - - 0.2 V 4.9 V 3.3 0.055
MMUN2234 22 47 A8L 80 - -100 nA -500 nA 0.13 50 V 50 V 0.25 V - - 0.2 V 4.9 V 15.4 0.38
MMUN2235 2.2 47 A8M 80 - -100 nA -500 nA 0.2 50 V 50 V 0.25 V - - 0.2 V 4.9 V 1.54 0.038
MMUN2238 2.2 A8R 160 - -100 nA -500 nA 4 50 V 50 V 0.25 V - - 0.2 V 4.9 V 1.54 -
MMUN2241 100 A8U 160 - -100 nA -500 nA 0.1 50 V 50 V - 0.25 V - 0.2 V - 70 -
Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit
Collector Base Voltage VCBO 50 V
Collector Emitter Voltage VCEO 50 V
Collector Current IC 100 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range TS -55 to +150 C

Package Outline

Package: SOT-23 Plastic Surface Mounted Package; 3 leads

Symbol Dimension (mm) Min Dimension (mm) Max
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
0 5

2410121447_CBI-MMUN2214_C21714132.pdf

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