Silicon Epitaxial Planar Diode CBI BAV116W with Low Leakage Current and Medium Speed Switching Features
Key Attributes
Model Number:
BAV116W
Product Custom Attributes
Mfr. Part #:
BAV116W
Package:
SOD-123
Product Description
Product Overview
This Silicon Epitaxial Planar Low Leakage Diode is designed for low leakage current applications, offering very low leakage current and medium speed switching times. It is suitable for general-purpose use where minimal current leakage is critical.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: Silicon Epitaxial Planar Low Leakage Diode
- Marking Code: ZX
- Package: SOD-123
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||
| Peak Repetitive Reverse Voltage | VRRM | 130 | V | |
| Continuous Forward Current | IFM | 215 | mA | |
| Repetitive Peak Forward Current | IFRM | 500 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 4 | A | at t = 1 s |
| 1 | A | at t = 1 ms | ||
| 0.5 | A | at t = 1 s | ||
| Power Dissipation | PD | 250 | mW | |
| Thermal Resistance Junction to Ambient Air | RJA | 500 | C/W | |
| Operating and Storage Temperature Range | Tj, Tstg | -65 to +150 | C | |
| Electrical Characteristics (Ta = 25 C) | ||||
| Reverse Breakdown Voltage | V(BR)R | 130 | V | at IR = 100 A |
| Forward Voltage | VF | - | V | at IF = 1 mA |
| - | V | at IF = 10 mA | ||
| 0.9 | V | at IF = 50 mA | ||
| 1 | V | at IF = 150 mA | ||
| Reverse Current | IR | - | nA | at VR = 75 V |
| 5 | nA | at VR = 75 V, Tj = 125 C | ||
| Total Capacitance | CT | 5 | pF | at VR = 0, f = 1 MHz |
| Reverse Recovery Time | trr | 3 | s | at IF = IR = 10 mA, Irr = 0.1 x IR, RL = 100 |
Pinning
| PIN | DESCRIPTION |
|---|---|
| 1 | Cathode |
| 2 | Anode |
2510101615_CBI-BAV116W_C51315117.pdf
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